HUFA75433S3ST datasheet, подбор замены

 ..1. Size:297K  fairchild semi
 hufa75433s3st.pdf 

March 2002 HUFA75433S3S N-Channel UltraFET MOSFETs 60V, 64A, 16m General Description Applications Motor and Load Control These N-Channel power MOSFETs are manufactured us- Powertrain Management ing the innovative UltraFET process. This advanced pro- cess technology achieves very low on-resistance per Features silicon area, resulting in outstanding performance. This de-

 7.1. Size:242K  fairchild semi
 hufa75429d3st.pdf 

November 2003 HUFA75429D3S N-Channel UltraFET MOSFETs 60V, 20A, 25m General Description Applications These N-Channel power MOSFETs are manufactured us- Motor & Load Control ing the innovative UltraFET process. This advanced pro- Powertrain Management cess technology achieves very low on-resistance per silicon Features area, resulting in outstanding performance. This devi

 8.1. Size:233K  fairchild semi
 hufa75333p3 hufa75333s3s hufa75333s3st.pdf 

HUFA75333G3, HUFA75333P3, HUFA75333S3S Data Sheet December 2001 66A, 55V, 0.016 Ohm. N-Channel UltraFET Features Power MOSFETs 66A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 8.2. Size:292K  fairchild semi
 hufa75329p3 hufa75329s3s.pdf 

HUFA75329G3, HUFA75329P3, HUFA75329S3S Data Sheet June 2002 49A, 55V, 0.024 Ohm, N-Channel UltraFET Features Power MOSFETs 49A, 55V These N-Channel power MOSFETs Ultra Low On-Resistance, rDS(ON) = 0.024 are manufactured using the Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Available on th

 8.3. Size:232K  fairchild semi
 hufa75321p3 hufa75321s3s hufa75321s3st.pdf 

HUFA75321P3, HUFA75321S3S Data Sheet December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Features Power MOSFETs 35A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves t

 8.4. Size:174K  fairchild semi
 hufa75307t3st.pdf 

HUFA75307T3ST Data Sheet December 2001 2.6A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFET 2.6A, 55V This N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.090 manufactured using the innovative Diode Exhibits Both High Speed and Soft Recovery UltraFET process. This advanced process technology achieves the Temperature Compensating PSPIC

 8.5. Size:207K  fairchild semi
 hufa75343g3 hufa75343p3 hufa75343s3s hufa75343s3st.pdf 

HUFA75343G3, HUFA75343P3, HUFA75343S3S Data Sheet December 2001 75A, 55V, 0.009 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance PSPICE and SABER M

 8.6. Size:149K  fairchild semi
 hufa75545p3 hufa75545s3s.pdf 

HUFA75545P3, HUFA75545S3S Data Sheet December 2001 75A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN Ultra Low On-Resistance GATE DRAIN - rDS(ON) = 0.010 , VGS = 10V (FLANGE) Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Electrical Models DRAIN - Spice and SABER T

 8.7. Size:243K  fairchild semi
 hufa75852g3.pdf 

HUFA75852G3_F085 Data Sheet December 2011 75A, 150V, 0.016 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE Ultra Low On-Resistance DRAIN GATE - rDS(ON) = 0.016 , VGS = 10V Peak Current vs Pulse Width Curve UIS Rating Curve Qualified to AEC Q101 RoHS Compliant DRAIN (TAB) Ordering Information Symbol PART NUMBER PACKAGE BRA

 8.8. Size:226K  fairchild semi
 hufa75321d3 hufa75321d3s.pdf 

HUFA75321D3, HUFA75321D3S Data Sheet December 2001 20A, 55V, 0.036 Ohm, N-Channel UltraFET Features Power MOSFETs 20A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves

 8.9. Size:171K  fairchild semi
 hufa75309t3st.pdf 

HUFA75309T3ST Data Sheet December 2001 3A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFET 3A, 55V This N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.070 manufactured using the innovative Diode Exhibits Both High Speed and Soft Recovery UltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE

 8.10. Size:223K  fairchild semi
 hufa75337g3 hufa75337p3 hufa75337s3s hufa75337s3st.pdf 

HUFA75337G3, HUFA75337P3, HUFA75337S3S Data Sheet December 2001 75A, 55V, 0.014 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 8.11. Size:200K  fairchild semi
 hufa75637p3 hufa75637s3s hufa75637s3st.pdf 

HUFA75637P3, HUFA75637S3S Data Sheet December 2001 44A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN Ultra Low On-Resistance (FLANGE) GATE - rDS(ON) = 0.030 , VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER Electrical Models DRAIN (FLANGE) - Spice a

 8.12. Size:329K  fairchild semi
 hufa75344g3 hufa75344p3 hufa75344s3s.pdf 

HUFA75344G3, HUFA75344P3, HUFA75344S3S, HUFA75344S3 Data Sheet December 2004 75A, 55V, 0.008 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance PSPICE a

 8.13. Size:196K  fairchild semi
 hufa75617d3s hufa75617d3st.pdf 

HUFA75617D3, HUFA75617D3S Data Sheet December 2001 16A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance SOURCE DRAIN DRAIN - rDS(ON) = 0.090 , VGS = 10V GATE (FLANGE) Simulation Models - Temperature Compensated PSPICE and SABER GATE Electrical Models DRAIN SOURCE - Spice and SABER

 8.14. Size:215K  fairchild semi
 hufa75307d3st hufa75307p3 hufa75307d3 hufa75307d3s.pdf 

HUFA75307P3, HUFA75307D3, HUFA75307D3S Data Sheet December 2001 15A, 55V, 0.090 Ohm, N-Channel UltraFET Features Power MOSFETs 15A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 8.15. Size:571K  fairchild semi
 hufa75345g3 hufa75345p3 hufa75345s3s hufa75345s3st.pdf 

HUFA75345G3, HUFA75345P3, HUFA75345S3S Data Sheet June 2003 75A, 55V, 0.007 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models a

 8.16. Size:352K  fairchild semi
 hufa75645s3s.pdf 

HUFA75645S3S Data Sheet December 2001 N-Channel UltraFET Power MOSFET 100 V, 75 A, 14 m Packaging Features Ultra Low On-Resistance JEDEC TO-263AB - rDS(ON) = 0.014 , VGS = 10V DRAIN Simulation Models (FLANGE) - Temperature Compensated PSPICE and SABER Electrical Models GATE - Spice and Saber Thermal Impedance Models SOURCE - www.fairchild.com Peak Current

 8.17. Size:268K  fairchild semi
 hufa75332g3 hufa75332s3s.pdf 

HUFA75332G3, HUFA75332P3, HUFA75332S3S Data Sheet June 2002 60A, 55V, 0.019 Ohm, N-Channel UltraFET Features Power MOSFETs 60A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models a

 8.18. Size:309K  fairchild semi
 hufa75329d3st hufa75329d3 hufa75329d3s.pdf 

HUFA75329D3, HUFA75329D3S Data Sheet June 1999 File Number 4426.4 20A, 55V, 0.026 Ohm, N-Channel UltraFET Features Power MOSFETs 20A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Mode

 8.19. Size:198K  fairchild semi
 hufa75623s3st.pdf 

HUFA75623P3, HUFA75623S3ST Data Sheet December 2001 22A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN Ultra Low On-Resistance (FLANGE) GATE - rDS(ON) = 0.064 , VGS = 10V GATE Simulation Models - Temperature Compensated PSPICE and SABER SOURCE Electrical Models DRAIN - Spice and SABER

 8.20. Size:221K  fairchild semi
 hufa75639g3 hufa75639p3 hufa75639s3s.pdf 

HUFA75639G3, HUFA75639P3, HUFA75639S3S Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs 56A, 100V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Models advanced process technology - Spice and Saber Thermal Imp

 8.21. Size:226K  fairchild semi
 hufa75339g3 hufa75339s3s hufa75339s3st.pdf 

HUFA75339G3, HUFA75339P3, HUFA75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 8.22. Size:152K  fairchild semi
 hufa75645p3.pdf 

HUFA75645P3, HUFA75645S3S Data Sheet December 2001 75A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN Ultra Low On-Resistance (FLANGE) GATE - rDS(ON) = 0.014 , VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER Electrical Models DRAIN - Spice and Saber

 8.23. Size:191K  fairchild semi
 huf75829d3st huf75829d3 huf75829d3s hufa75829d3s hufa75829d3st.pdf 

HUFA75829D3, HUFA75829D3S Data Sheet December 2001 18A, 150V, 0.110 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN Ultra Low On-Resistance SOURCE (FLANGE) DRAIN - rDS(ON) = 0.110 , VGS = 10V GATE GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER Electrical Models DRAIN (FLANGE) - Spice

 8.24. Size:139K  fairchild semi
 hufa75842p3 hufa75842s3s hufa75842s3st.pdf 

HUFA75842P3, HUFA75842S3S Data Sheet November 2000 File Number 4968 43A, 150V, 0.042 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN Ultra Low On-Resistance DRAIN (FLANGE) GATE - rDS(ON) = 0.042 , VGS = 10V Simulation Models - Temperature Compensated PSPICE and SABER GATE SOURCE Electrical Models DRAIN -

 8.25. Size:224K  fairchild semi
 hufa75321d3 hufa75321d3st.pdf 

HUFA75321D3, HUFA75321D3S Data Sheet December 2001 20A, 55V, 0.036 Ohm, N-Channel UltraFET Features Power MOSFETs 20A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensating PSPICE and SABER innovative UltraFET process. This Models advanced process technology - Thermal Impedance SPICE and SABER Models achieves

 8.26. Size:215K  fairchild semi
 hufa75309d3 hufa75309d3s hufa75309p3.pdf 

HUFA75309P3, HUFA75309D3, HUFA75309D3S Data Sheet December 2001 19A, 55V, 0.070 Ohm, N-Channel UltraFET Features Power MOSFETs 19A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Models advanced process technology - SPICE and SABER Thermal Impedance Models

 8.27. Size:210K  fairchild semi
 hufa75823d3s hufa75823d3st.pdf 

HUFA75823D3, HUFA75823D3S Data Sheet December 2001 14A, 150V, 0.150 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features DRAIN (FLANGE) Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.150 , VGS = 10V GATE GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER Electrical Models DRAIN (FLANGE) - Spice

 8.28. Size:221K  fairchild semi
 hufa75639g3 hufa75639p3 hufa75639s3st.pdf 

HUFA75639G3, HUFA75639P3, HUFA75639S3S Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs 56A, 100V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Models advanced process technology - Spice and Saber Thermal Imp

 8.29. Size:195K  fairchild semi
 hufa75652g3.pdf 

HUFA75652G3 Data Sheet December 2001 75A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN Ultra Low On-Resistance GATE - rDS(ON) = 0.008 , VGS = 10V Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com DRAIN HUFA75652G3

 8.30. Size:289K  onsemi
 hufa75307t3st.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.31. Size:258K  inchange semiconductor
 hufa75339g3.pdf 

Isc N-Channel MOSFET Transistor HUFA75339G3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 8.32. Size:257K  inchange semiconductor
 hufa75545p3.pdf 

INCHANGE Semiconductor isc N-Channel MOSFET Transistor HUFA75545P3 DESCRIPTION Drain Current I =75A@ T =25 D C Drain Source Voltage- V =80V(Min) DSS Static Drain-Source On-Resistance R = 10m (Max) DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in applications such as switching Regulators,sw