HUFA76423P3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HUFA76423P3
Маркировка: 76423P
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 85 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 35 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 28 nC
Время нарастания (tr): 147 ns
Выходная емкость (Cd): 315 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.03 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для HUFA76423P3
HUFA76423P3 Datasheet (PDF)
hufa76423p3 hufa76423s3s hufa76423s3st.pdf
HUFA76423P3, HUFA76423S3SData Sheet December 200133A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-220AB JEDEC TO-263ABFeatures Ultra Low On-ResistanceSOURCE DRAINDRAIN (FLANGE)- rDS(ON) = 0.030, VGS = 10VGATE- rDS(ON) = 0.035, VGS = 5VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE and SABER Ele
hufa76423d3s hufa76423d3st.pdf
HUFA76423D3, HUFA76423D3SData Sheet December 200120A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.032, VGS = 10VDRAIN DRAIN- rDS(ON) = 0.037, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER
hufa76429d3.pdf
HUFA76429D3, HUFA76429D3SData Sheet December 200120A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.023, VGS = 10VSOURCE (FLANGE)DRAIN- rDS(ON) = 0.027, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl
hufa76429p3 hufa76429s3s hufa76429s3st.pdf
HUFA76429P3, HUFA76429S3SData Sheet December 200144A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.022, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.025, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEE
hufa76429d3s hufa76429d3st.pdf
HUFA76429D3, HUFA76429D3SData Sheet December 200120A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.023, VGS = 10VSOURCE (FLANGE)DRAIN- rDS(ON) = 0.027, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl
hufa76429d3.pdf
HUFA76429D3Data Sheet October 2013N-Channel Logic Level UltraFET Power MOSFET60 V, 20 A, 27 mPackagingFeaturesJEDEC TO-251AA Ultra Low On-Resistance- rDS(ON) = 0.023, VGS = 10VSOURCE- rDS(ON) = 0.027, VGS = 5VDRAINGATE Simulation Models- Temperature Compensated PSPICE and SABERElectriecal ModelsDRAIN - Spice and SABER Thermal Impedance Models
hufa76429d3st-f085.pdf
HUFA76429D3ST-F085 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeatures Ultra Low On-ResistanceJEDEC TO-252AA- rDS(ON) = 0.023, VGS = 10V- rDS(ON) = 0.027, VGS = 5VDRAIN (FLANGE) Simulation Models- Temperature Compensated PSPICE and SABER Electriecal ModelsGATE- Spice and SABER Thermal Impedance ModelsSOURCE- ww
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