HUFA76633S3S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: HUFA76633S3S
Маркировка: 76633S
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 145 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 39 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 56 nC
Время нарастания (tr): 110 ns
Выходная емкость (Cd): 415 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.035 Ohm
Тип корпуса: TO-263AB
Аналог (замена) для HUFA76633S3S
HUFA76633S3S Datasheet (PDF)
hufa76633p3 hufa76633s3s hufa76633s3st.pdf
HUFA76633P3, HUFA76633S3SData Sheet January 200238A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.035, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.036, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl
hufa76639p3 hufa76639s3s hufa76639s3st.pdf
HUFA76639P3, HUFA76639S3SData Sheet January 200250A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.026, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.027, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl
hufa76645p3 hufa76645s3s hufa76645s3st.pdf
HUFA76645P3, HUFA76645S3SData Sheet January 200275A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.014, VGS = 10VDRAIN (FLANGE)GATE - rDS(ON) = 0.015, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER Electrical
hufa76645s3st f085.pdf
HUFA76645S3ST_F085Data Sheet September 201075A, 100V, 0.015 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeatures Ultra Low On-ResistanceJEDEC TO-263AB- rDS(ON) = 0.014, VGS = 10V- rDS(ON) = 0.015, VGS = 5VDRAIN Simulation Models (FLANGE)- Temperature Compensated PSPICE and SABER Electrical ModelsGATE- Spice and SABER Thermal Imped
hufa76619d3st hufa76619d3 hufa76619d3s.pdf
HUFA76619D3, HUFA76619D3SData Sheet January 200218A, 100V, 0.087 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAINDRAINSOURCE (FLANGE) (FLANGE)- rDS(ON) = 0.085, VGS = 10VDRAINGATE- rDS(ON) = 0.087, VGS = 5VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE
hufa76629d3 hufa76629d3st.pdf
HUFA76629D3, HUFA76629D3SData Sheet January 200220A, 100V, 0.054 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAINSOURCE (FLANGE) - rDS(ON) = 0.052, VGS = 10VDRAIN- rDS(ON) = 0.054, VGS = 5VGATEGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and SABER Elect
hufa76609d3st hufa76609d3 hufa76609d3s.pdf
HUFA76609D3, HUFA76609D3SData Sheet January 200210A, 100V, 0.165 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-ResistanceDRAIN DRAIN- rDS(ON) = 0.160, VGS = 10VSOURCE (FLANGE) (FLANGE)DRAINGATE - rDS(ON) = 0.165, VGS = 5VGATE Simulation Models- Temperature Compensated PSPICE and SABER
hufa76609d3.pdf
HUFA76609D3www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwi
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