PMBFJ175. Аналоги и основные параметры

Наименование производителя: PMBFJ175

Тип транзистора: JFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.07 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 10 ns

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 125 Ohm

Тип корпуса: SOT23

Аналог (замена) для PMBFJ175

- подборⓘ MOSFET транзистора по параметрам

 

PMBFJ175 даташит

 ..1. Size:31K  philips
pmbfj174 pmbfj175 pmbfj176 pmbfj177 cnv 2.pdfpdf_icon

PMBFJ175

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are int

 ..2. Size:57K  nxp
pmbfj174 pmbfj175 pmbfj176 pmbfj177.pdfpdf_icon

PMBFJ175

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi

 7.1. Size:228K  philips
pmbfj174 pmbf175 pmbf176 pmbf177.pdfpdf_icon

PMBFJ175

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi

 8.1. Size:32K  philips
pmbfj111 pmbfj112 pmbfj113 cnv 2.pdfpdf_icon

PMBFJ175

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ111; N-channel junction FETs PMBFJ112; PMBFJ113 FEATURES High-speed switching Interchangeability of drain and source connections 3 handbook, halfpage Low

Другие IGBT... PJX8802, PJX8803, PJX8804, PJX8805, PJX8806, PJZ6NA90, PJZ9NA90, PMBFJ174, IRFB7545, PMBFJ176, PMBFJ177, PMBFJ620, PMC85XP, PMCM4401VNE, PMCM4401VPE, PMCM440VNE, PMCM6501VPE