Справочник MOSFET. PMDPB70XP

 

PMDPB70XP Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PMDPB70XP
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.49 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 54 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.087 Ohm
   Тип корпуса: HUSON6
     - подбор MOSFET транзистора по параметрам

 

PMDPB70XP Datasheet (PDF)

 ..1. Size:839K  nxp
pmdpb70xp.pdfpdf_icon

PMDPB70XP

PMDPB70XP30 V, dual P-channel Trench MOSFETRev. 1 9 March 2012 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small and leadless

 0.1. Size:817K  nxp
pmdpb70xpe.pdfpdf_icon

PMDPB70XP

PMDPB70XPE20 V dual P-channel Trench MOSFETRev. 1 20 June 2012 Product data sheet1. Product profile1.1 General descriptionDual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching 2

 7.1. Size:842K  nxp
pmdpb70en.pdfpdf_icon

PMDPB70XP

PMDPB70EN30 V, dual N-channel Trench MOSFETRev. 1 25 April 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small

 9.1. Size:879K  nxp
pmdpb55xp.pdfpdf_icon

PMDPB70XP

PMDPB55XP20 V, dual P-channel Trench MOSFETRev. 3 4 June 2012 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an

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History: CET04N10 | H5N2004DS | DMP22M2UPS-13 | STD3N30T4

 

 
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