PMDPB70XPE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PMDPB70XPE
Маркировка: 2B
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.515 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.25 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 5 nC
trⓘ - Время нарастания: 16 ns
Cossⓘ - Выходная емкость: 103 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.079 Ohm
Тип корпуса: DFN2020-6
Аналог (замена) для PMDPB70XPE
PMDPB70XPE Datasheet (PDF)
pmdpb70xpe.pdf
PMDPB70XPE20 V dual P-channel Trench MOSFETRev. 1 20 June 2012 Product data sheet1. Product profile1.1 General descriptionDual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching 2
pmdpb70xp.pdf
PMDPB70XP30 V, dual P-channel Trench MOSFETRev. 1 9 March 2012 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small and leadless
pmdpb70en.pdf
PMDPB70EN30 V, dual N-channel Trench MOSFETRev. 1 25 April 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small
pmdpb55xp.pdf
PMDPB55XP20 V, dual P-channel Trench MOSFETRev. 3 4 June 2012 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an
pmdpb95xne.pdf
PMDPB95XNE30 V dual N-channel Trench MOSFET26 September 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless mediumpower DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technolo
pmdpb80xp.pdf
PMDPB80XP20 V, dual P-channel Trench MOSFETRev. 1 30 May 2012 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V RDSon rated for low voltag
pmdpb42un.pdf
PMDPB42UN20 V, dual N-channel Trench MOSFETRev. 1 16 May 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an
pmdpb85upe.pdf
PMDPB85UPE20 V dual P-channel Trench MOSFETRev. 1 20 June 2012 Product data sheet1. Product profile1.1 General descriptionDual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage
pmdpb30xn.pdf
PMDPB30XN20 V, dual N-channel Trench MOSFET6 July 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadlessultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET techno
pmdpb95xne2.pdf
PMDPB95XNE230 V, dual N-channel Trench MOSFET14 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadlessDFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Very fast switching Trench MOSFET technology Leadless medium powe
pmdpb28un.pdf
PMDPB28UN20 V, dual N-channel Trench MOSFETRev. 1 26 April 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small
pmdpb38une.pdf
PMDPB38UNE20 V dual N-channel Trench MOSFET26 September 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless mediumpower DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technolo
pmdpb56xn.pdf
PMDPB56XN30 V, dual N-channel Trench MOSFETRev. 1 16 May 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an
pmdpb56xnea.pdf
PMDPB56XNEA30 V, dual N-channel Trench MOSFET19 April 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadlessDFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Leadless medium
pmdpb58upe.pdf
PMDPB58UPE20 V dual P-channel Trench MOSFETRev. 1 19 June 2012 Product data sheet1. Product profile1.1 General descriptionDual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100