PMDPB70XPE. Аналоги и основные параметры
Наименование производителя: PMDPB70XPE
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 0.515 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 16 ns
Cossⓘ - Выходная емкость: 103 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.079 Ohm
Тип корпуса: DFN2020-6
Аналог (замена) для PMDPB70XPE
- подборⓘ MOSFET транзистора по параметрам
PMDPB70XPE даташит
..1. Size:817K nxp
pmdpb70xpe.pdf 
PMDPB70XPE 20 V dual P-channel Trench MOSFET Rev. 1 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching 2
5.1. Size:839K nxp
pmdpb70xp.pdf 
PMDPB70XP 30 V, dual P-channel Trench MOSFET Rev. 1 9 March 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small and leadless
7.1. Size:842K nxp
pmdpb70en.pdf 
PMDPB70EN 30 V, dual N-channel Trench MOSFET Rev. 1 25 April 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small
9.1. Size:879K nxp
pmdpb55xp.pdf 
PMDPB55XP 20 V, dual P-channel Trench MOSFET Rev. 3 4 June 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small an
9.2. Size:200K nxp
pmdpb95xne.pdf 
PMDPB95XNE 30 V dual N-channel Trench MOSFET 26 September 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technolo
9.3. Size:894K nxp
pmdpb80xp.pdf 
PMDPB80XP 20 V, dual P-channel Trench MOSFET Rev. 1 30 May 2012 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated for low voltag
9.4. Size:930K nxp
pmdpb42un.pdf 
PMDPB42UN 20 V, dual N-channel Trench MOSFET Rev. 1 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small an
9.5. Size:873K nxp
pmdpb85upe.pdf 
PMDPB85UPE 20 V dual P-channel Trench MOSFET Rev. 1 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage
9.6. Size:222K nxp
pmdpb30xn.pdf 
PMDPB30XN 20 V, dual N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET techno
9.7. Size:720K nxp
pmdpb95xne2.pdf 
PMDPB95XNE2 30 V, dual N-channel Trench MOSFET 14 June 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology Leadless medium powe
9.8. Size:829K nxp
pmdpb28un.pdf 
PMDPB28UN 20 V, dual N-channel Trench MOSFET Rev. 1 26 April 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small
9.9. Size:211K nxp
pmdpb38une.pdf 
PMDPB38UNE 20 V dual N-channel Trench MOSFET 26 September 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technolo
9.10. Size:879K nxp
pmdpb56xn.pdf 
PMDPB56XN 30 V, dual N-channel Trench MOSFET Rev. 1 16 May 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Small an
9.11. Size:727K nxp
pmdpb56xnea.pdf 
PMDPB56XNEA 30 V, dual N-channel Trench MOSFET 19 April 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Leadless medium
9.12. Size:875K nxp
pmdpb58upe.pdf 
PMDPB58UPE 20 V dual P-channel Trench MOSFET Rev. 1 19 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage
Другие IGBT... PMDPB30XN, PMDPB38UNE, PMDPB42UN, PMDPB55XP, PMDPB56XN, PMDPB58UPE, PMDPB70EN, PMDPB70XP, IRF730, PMDPB80XP, PMDPB85UPE, PMDPB95XNE, PMDT290UCE, PMDT290UNE, PMDT670UPE, PMDXB1200UPE, PMDXB550UNE
