Справочник MOSFET. PMDPB85UPE

 

PMDPB85UPE Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PMDPB85UPE
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.515 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2.9 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 78 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.103 Ohm
   Тип корпуса: DFN2020-6
 

 Аналог (замена) для PMDPB85UPE

   - подбор ⓘ MOSFET транзистора по параметрам

 

PMDPB85UPE Datasheet (PDF)

 ..1. Size:873K  nxp
 pmdpb85upe.pdf pdf_icon

PMDPB85UPE

PMDPB85UPE20 V dual P-channel Trench MOSFETRev. 1 20 June 2012 Product data sheet1. Product profile1.1 General descriptionDual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage

 8.1. Size:894K  nxp
 pmdpb80xp.pdf pdf_icon

PMDPB85UPE

PMDPB80XP20 V, dual P-channel Trench MOSFETRev. 1 30 May 2012 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V RDSon rated for low voltag

 9.1. Size:879K  nxp
 pmdpb55xp.pdf pdf_icon

PMDPB85UPE

PMDPB55XP20 V, dual P-channel Trench MOSFETRev. 3 4 June 2012 Product data sheet1. Product profile1.1 General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Small an

 9.2. Size:200K  nxp
 pmdpb95xne.pdf pdf_icon

PMDPB85UPE

PMDPB95XNE30 V dual N-channel Trench MOSFET26 September 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless mediumpower DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technolo

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... PMDPB42UN , PMDPB55XP , PMDPB56XN , PMDPB58UPE , PMDPB70EN , PMDPB70XP , PMDPB70XPE , PMDPB80XP , IRF3205 , PMDPB95XNE , PMDT290UCE , PMDT290UNE , PMDT670UPE , PMDXB1200UPE , PMDXB550UNE , PMDXB600UNE , PMDXB950UPE .

History: SUU10P10-195 | CJP85N80 | TSM4415CS | FDZ7296 | CHM9435GP | AP2535GEY-HF | AOW12N50

 

 
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