Справочник MOSFET. PMPB40SNA

 

PMPB40SNA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PMPB40SNA
   Маркировка: 1E
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 12.9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 12.1 nC
   trⓘ - Время нарастания: 23 ns
   Cossⓘ - Выходная емкость: 78 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.043 Ohm
   Тип корпуса: DFN2020MD-6

 Аналог (замена) для PMPB40SNA

 

 

PMPB40SNA Datasheet (PDF)

 ..1. Size:271K  nxp
 pmpb40sna.pdf

PMPB40SNA PMPB40SNA

PMPB40SNA60 V N-channel Trench MOSFET29 October 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package:

 9.1. Size:280K  nxp
 pmpb48epa.pdf

PMPB40SNA PMPB40SNA

PMPB48EPA30 V, P-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Side wettable flanks for optical solder inspection

 9.2. Size:235K  nxp
 pmpb48ep.pdf

PMPB40SNA PMPB40SNA

PMPB48EP30 V, single P-channel Trench MOSFET10 September 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Small and leadless

 9.3. Size:237K  nxp
 pmpb47xp.pdf

PMPB40SNA PMPB40SNA

PMPB47XP30 V, single P-channel Trench MOSFET5 December 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.1.2 Features and benefits Trench MOSFET technology Small and leadless ul

 9.4. Size:256K  nxp
 pmpb43xpe.pdf

PMPB40SNA PMPB40SNA

PMPB43XPE20 V, single P-channel Trench MOSFET26 November 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits 1 kV ESD protected Small and leadless ultra thin SMD plastic packa

 9.5. Size:280K  nxp
 pmpb43xpea.pdf

PMPB40SNA PMPB40SNA

PMPB43XPEA20 V, P-channel Trench MOSFET27 March 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top