JANSR2N7399 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: JANSR2N7399
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 50 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 11 A
Максимальная температура канала (Tj): 150 °C
Сопротивление сток-исток открытого транзистора (Rds): 0.21 Ohm
Тип корпуса: TO257AA
Аналог (замена) для JANSR2N7399
JANSR2N7399 Datasheet (PDF)
jansr2n7399.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
JANSR2N7399Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 11A, 100V, rDS(ON) = 0.210 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)
jansr2n7398.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
JANSR2N7398Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 2A, 500V, rDS(ON) = 2.50 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-tions. Enhanced Power MOSFET immunity to Single Even
jansr2n7396.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
JANSR2N7396Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 5A, 200V, rDS(ON) = 0.460 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD (Si)t
jansr2n7395.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
JANSR2N7395Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard,June 1998 N-Channel Power MOSFETFeatures Description 8A, 100V, rDS(ON) = 0.230 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-tions. Enhanced Power MOSFET immunity to Single Ev
Другие MOSFET... JANSR2N7272 , JANSR2N7275 , JANSR2N7278 , JANSR2N7292 , JANSR2N7294 , JANSR2N7395 , JANSR2N7396 , JANSR2N7398 , 7N65 , JANSR2N7400 , JANSR2N7401 , JANSR2N7402 , JANSR2N7403 , JANSR2N7404 , JANSR2N7405 , JANSR2N7406 , JANSR2N7410 .