JANSR2N7399. Аналоги и основные параметры
Наименование производителя: JANSR2N7399
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.21 Ohm
Тип корпуса: TO257AA
Аналог (замена) для JANSR2N7399
- подборⓘ MOSFET транзистора по параметрам
JANSR2N7399 даташит
jansr2n7399.pdf
JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 11A, 100V, rDS(ON) = 0.210 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si)
jansr2n7398.pdf
JANSR2N7398 Formerly FSL430R4 2A, 500V, 2.50 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 2A, 500V, rDS(ON) = 2.50 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Even
jansr2n7396.pdf
JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 5A, 200V, rDS(ON) = 0.460 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD (Si) t
jansr2n7395.pdf
JANSR2N7395 Formerly FSL130R4 8A, 100V, 0.230 Ohm, Rad Hard, June 1998 N-Channel Power MOSFET Features Description 8A, 100V, rDS(ON) = 0.230 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- tions. Enhanced Power MOSFET immunity to Single Ev
Другие MOSFET... JANSR2N7272 , JANSR2N7275 , JANSR2N7278 , JANSR2N7292 , JANSR2N7294 , JANSR2N7395 , JANSR2N7396 , JANSR2N7398 , IRF9540 , JANSR2N7400 , JANSR2N7401 , JANSR2N7402 , JANSR2N7403 , JANSR2N7404 , JANSR2N7405 , JANSR2N7406 , JANSR2N7410 .
History: SDD03N50 | FQB34P10TMF085
History: SDD03N50 | FQB34P10TMF085
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
bc547c | 2sa726 | 2sd313 | 2sc536 | d718 transistor | irfp250n datasheet | 2n5550 | 2sd1047




