PMZB200UNE - Даташиты. Аналоги. Основные параметры
Наименование производителя: PMZB200UNE
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.35 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 11 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.25 Ohm
Тип корпуса: DFN1006B-3
Аналог (замена) для PMZB200UNE
PMZB200UNE Datasheet (PDF)
pmzb200une.pdf

PMZB200UNE30 V, N-channel Trench MOSFET12 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology
pmzb290un.pdf

PMZB290UN20 V, single N-channel Trench MOSFETRev. 1 11 May 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Fast switching Low threshold voltage
pmzb290une.pdf

PMZB290UNE20 V, single N-channel Trench MOSFETRev. 3 23 March 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection u
pmzb290une2.pdf

PMZB290UNE220 V, N-channel Trench MOSFET24 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching
Другие MOSFET... PMZ350UPE , PMZ370UNE , PMZ390UNE , PMZ550UNE , PMZ600UNE , PMZ950UPE , PMZB1200UPE , PMZB150UNE , IRF730 , PMZB290UN , PMZB290UNE , PMZB290UNE2 , PMZB300XN , PMZB320UPE , PMZB350UPE , PMZB370UNE , PMZB380XN .
History: PJD4NA70 | APT50M75B2LL | BRCS200P03ZC | VBZE20N20 | APT50M75JLL | 2SK3481-Z | BUK7Y12-40E
History: PJD4NA70 | APT50M75B2LL | BRCS200P03ZC | VBZE20N20 | APT50M75JLL | 2SK3481-Z | BUK7Y12-40E



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