PMZB290UNE - Даташиты. Аналоги. Основные параметры
Наименование производителя: PMZB290UNE
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 0.36 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 4 ns
Cossⓘ - Выходная емкость: 15 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.38 Ohm
Тип корпуса: DFN1006B-3
Аналог (замена) для PMZB290UNE
PMZB290UNE Datasheet (PDF)
pmzb290une.pdf
PMZB290UNE20 V, single N-channel Trench MOSFETRev. 3 23 March 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching ESD protection u
pmzb290une2.pdf
PMZB290UNE220 V, N-channel Trench MOSFET24 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching
pmzb290un.pdf
PMZB290UN20 V, single N-channel Trench MOSFETRev. 1 11 May 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Fast switching Low threshold voltage
pmzb200une.pdf
PMZB200UNE30 V, N-channel Trench MOSFET12 March 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology
Другие MOSFET... PMZ390UNE , PMZ550UNE , PMZ600UNE , PMZ950UPE , PMZB1200UPE , PMZB150UNE , PMZB200UNE , PMZB290UN , IRFZ44N , PMZB290UNE2 , PMZB300XN , PMZB320UPE , PMZB350UPE , PMZB370UNE , PMZB380XN , PMZB390UNE , PMZB420UN .
History: STL10N60M2 | STL100NH3LL | 5N65L-TF3T-T
History: STL10N60M2 | STL100NH3LL | 5N65L-TF3T-T
Список транзисторов
Обновления
MOSFET: AGM608C | AGM6080D | AGM6080C | AGM6070A | AGM606S | AGM605Q | AGM605F | AGM605C | AGM605A | AGM603F | AGM603D | AGM603C | AGM6035F | AGM6035A | AGM602C | AGM40P75D
Popular searches
mdp1991 datasheet | 40636 transistor | ao3407 datasheet | c1841 transistor | fb42n20d | irfb3306 equivalent | irfp460 характеристики | k2837 datasheet





