PNMT60V02E
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PNMT60V02E
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.15
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 0.18
A
Cossⓘ - Выходная емкость: 20
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 7.5
Ohm
Тип корпуса:
SOT-23
Аналог (замена) для PNMT60V02E
PNMT60V02E
Datasheet (PDF)
..1. Size:168K prisemi
pnmt60v02e.pdf 
PNMT60V02EN-Channel MOSFETDescriptionPNMT60V02E is designed for high speed switching applicationsThe enhancement mode MOS is extremely high density cell and low on-resistance.D3MOSFET Product SummaryV (V) R () V (V) I (A)DS DS(on) GS(th) DG160 7.5@ V =10V 0.5 to 1.5 0.18GSS2Electrical characteristics per line@25( unless otherwise specified)Para
5.1. Size:109K prisemi
pnmt60v02.pdf 
PNMT60V02 N-Channel MOSFET Description PNMT60V02 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() VGS(th)(V) ID(A) G1 60 7.5@ VGS=10V 0.5 to 1.5 0.18 S2 Electrical characteristics per line@25( unless otherwise specified) Par
7.1. Size:121K prisemi
pnmt60v3.pdf 
PNMT60V3 N-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D3 low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)() ID(A) G1 60 0.096@ VGS=4.5V 3S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF/ON CHARACTE
9.1. Size:241K prisemi
pnmt6n2.pdf 
PNMT6N2Transistor with N-MOSFETFeatureTop ViewThis device is Pb-Free, Halogen Free/BFR Free and RoHS compliant.6 5C 4PNMT6N2 is composed by a transistor and a MOSFET C STransistor:8(B/D)7(C) Very low collector to emitter saturation voltage DC current gain >1001 23E E G 3A continuous collector current PNP epitaxial
9.2. Size:252K prisemi
pnmt6n1.pdf 
PNMT6N1Transistor with N-MOSFETFeatureTop ViewThis device is Pb-Free, Halogen Free/BFR Free and RoHS compliant.1PNMT6N1 is composed by a transistor and a MOSFET 6ECTransistor:2B5G3D4S Very low collector to emitter saturation voltage DC current gain >100 3A continuous collector current PNP epitaxial planar
9.3. Size:230K prisemi
pnmt6n1-lb.pdf 
PNMT6N1-LB Transistor with N-MOSFET Feature Top View This device is Pb-Free, Halogen Free/BFR Free and RoHS compliant. E 1PNMT6N1-LB is composed by a transistor and a MOSFET 6C Transistor: B 2G5SD 3 4 Very low collector to emitter saturation voltage DC current gain
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