PSMN005-25D. Аналоги и основные параметры

Наименование производителя: PSMN005-25D

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 125 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 25 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 15 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 170 ns

Cossⓘ - Выходная емкость: 970 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0058 Ohm

Тип корпуса: SOT-428

Аналог (замена) для PSMN005-25D

- подборⓘ MOSFET транзистора по параметрам

 

PSMN005-25D даташит

 ..1. Size:148K  philips
psmn005-25d.pdfpdf_icon

PSMN005-25D

DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-25D N-channel logic level TrenchMOS(TM) transistor Product specification October 1999 Philips Semiconductors Product specification N-channel logic level TrenchMOS(TM) transistor PSMN005-25D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Logic

 ..2. Size:149K  philips
psmn005-25d hg 5.pdfpdf_icon

PSMN005-25D

DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-25D N-channel logic level TrenchMOS(TM) transistor Product specification October 1999 Philips Semiconductors Product specification N-channel logic level TrenchMOS(TM) transistor PSMN005-25D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 25 V Very low on-state resistance Fast switching ID = 75 A Logic

 6.1. Size:120K  philips
psmn005-55b p hg.pdfpdf_icon

PSMN005-25D

DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS(TM) transistor Product specification October 1999 Philips Semiconductors Product specification PSMN005-55B; N-channel logic level TrenchMOS(TM) transistor PSMN005-55P FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast swit

 6.2. Size:271K  philips
psmn005-75p psmn005 75p 75b.pdfpdf_icon

PSMN005-25D

PSMN005-75P/75B N-channel enhancement mode field-effect transistor Rev. 01 26 April 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. Product availability PSMN005-75P in SOT78 (TO-220AB) PSMN005-75B in SOT404 (D2-PAK). 2. Features Low on-state resistance Fast switching. 3. Applications Hi

Другие IGBT... PSMG100-05, PSMG150-01, PSMG50-05, PSMG60-08, PSMN003-30B, PSMN003-30P, PSMN004-36B, PSMN004-55W, IRF730, PSMN005-55B, PSMN005-55P, PSMN005-75P, PSMN008-75P, PSMN009-100W, PSMN010-25YLC, PSMN010-55D, PSMN011-30YLC