PSMN011-30YLC. Аналоги и основные параметры
Наименование производителя: PSMN011-30YLC
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 29 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 37 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 12.7 ns
Cossⓘ - Выходная емкость: 146 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0145 Ohm
Тип корпуса: SOT-669
Аналог (замена) для PSMN011-30YLC
- подборⓘ MOSFET транзистора по параметрам
PSMN011-30YLC даташит
psmn011-30ylc.pdf
PSMN011-30YLC N-channel 30 V 11.6 m logic level MOSFET in LFPAK using NextPower technology Rev. 3 24 October 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and bene
psmn011-80ys.pdf
PSMN011-80YS N-channel LFPAK 80 V 11 m standard level MOSFET Rev. 02 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMO
psmn011-60ml.pdf
PSMN011-60ML N-channel 60 V 11.3 m logic level MOSFET in LFPAK33 4 June 2013 Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction loss
psmn011-60ms.pdf
PSMN011-60MS N-channel 60 V 11.3 m standard level MOSFET in LFPAK33 4 June 2013 Product data sheet 1. General description Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conductio
Другие IGBT... PSMN005-25D, PSMN005-55B, PSMN005-55P, PSMN005-75P, PSMN008-75P, PSMN009-100W, PSMN010-25YLC, PSMN010-55D, 50N06, PSMN011-60ML, PSMN011-60MS, PSMN012-25YLC, PSMN012-80BS, PSMN013-100XS, PSMN013-100YSE, PSMN013-30MLC, PSMN015-60BS
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