PSMN011-60ML MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN011-60ML
Маркировка: M11L60
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 91 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.45 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 61 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 37.2 nC
trⓘ - Время нарастания: 20.2 ns
Cossⓘ - Выходная емкость: 199 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0113 Ohm
Тип корпуса: LFPAK33
Аналог (замена) для PSMN011-60ML
PSMN011-60ML Datasheet (PDF)
psmn011-60ml.pdf
PSMN011-60MLN-channel 60 V 11.3 m logic level MOSFET in LFPAK334 June 2013 Product data sheet1. General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduction loss
psmn011-60ms.pdf
PSMN011-60MSN-channel 60 V 11.3 m standard level MOSFET in LFPAK334 June 2013 Product data sheet1. General descriptionStandard level enhancement mode N-channel MOSFET in LFPAK33 package. Thisproduct is designed and qualified for use in a wide range of industrial, communicationsand domestic equipment.2. Features and benefits High efficiency due to low switching and conductio
psmn011-80ys.pdf
PSMN011-80YSN-channel LFPAK 80 V 11 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO
psmn011-100ysf.pdf
PSMN011-100YSFNextPower 100V, 10.9 m N-channel MOSFET in LFPAK56package18 March 2019 Product data sheet1. General descriptionNextPower 100V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Low Qrr for higher efficiency and lower spiking Qualified to 175 C Low QG x RDSon FOM for
psmn011-80ys.pdf
PSMN011-80YSN-channel LFPAK 80 V 11 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO
psmn011-30ylc.pdf
PSMN011-30YLCN-channel 30 V 11.6 m logic level MOSFET in LFPAK using NextPower technologyRev. 3 24 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and bene
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918