PSMN012-80BS. Аналоги и основные параметры
Наименование производителя: PSMN012-80BS
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 148 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 80 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 52 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 16 ns
Cossⓘ - Выходная емкость: 384 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
Тип корпуса: D2-PAK
Аналог (замена) для PSMN012-80BS
- подборⓘ MOSFET транзистора по параметрам
PSMN012-80BS даташит
psmn012-80bs.pdf
PSMN012-80BS N-channel 80 V 11 m standard level MOSFET in D2PAK Rev. 2 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency
psmn012-80ps.pdf
PSMN012-80PS N-channel 80 V 11 m standard level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low
psmn012-80ps.pdf
PSMN012-80PS N-channel 80 V 11 m standard level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low
psmn012-100ys.pdf
PSMN012-100YS N-channel 100V 12m standard level MOSFET in LFPAK Rev. 04 23 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced Tren
Другие IGBT... PSMN008-75P, PSMN009-100W, PSMN010-25YLC, PSMN010-55D, PSMN011-30YLC, PSMN011-60ML, PSMN011-60MS, PSMN012-25YLC, IRF1404, PSMN013-100XS, PSMN013-100YSE, PSMN013-30MLC, PSMN015-60BS, PSMN016-100BS, WPH4003, WT3139K, WTC3401
History: KTS1C1S250 | HM70P04K | HM4409
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