WVM15N50. Аналоги и основные параметры
Наименование производителя: WVM15N50
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 250 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
ton ⓘ - Время включения: 180 ns
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
Тип корпуса: TO3
Аналог (замена) для WVM15N50
- подборⓘ MOSFET транзистора по параметрам
WVM15N50 даташит
wvm15n50.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N50(MTM15N50) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of powe
wvm15n40.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N40(IRF350) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power s
wvm15n60.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N60 Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of power source co
wvm15n20.pdf
Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China WVM15N20(MTM15N20) Power MOSFET(N-channel) Transistor Features 1. It s voltage control component with good input impedance, small starting power dissipation, wide area of safe operation, good temperature stability. 2. Implementation of standards QZJ840611 3. Use for high speed switch, circuit of powe
Другие MOSFET... WTC3401 , WTX1013 , WVM11N80 , WVM12N10 , WVM13N50 , WVM15N20 , WVM15N40 , WVM15N45 , IRF630 , WVM15N60 , WVM18N20 , WVM20N50 , WVM20N8 , WVM21N50 , WVM25N40 , WVM28N10 , WVM3.9N100 .
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