PSMN0R9-30YLD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN0R9-30YLD
Маркировка: *0D930L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 349 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.2 V
Максимально допустимый постоянный ток стока |Id|: 100 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 109 nC
Время нарастания (tr): 49.8 ns
Выходная емкость (Cd): 2914 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.00087 Ohm
Тип корпуса: LFPAK56
Аналог (замена) для PSMN0R9-30YLD
PSMN0R9-30YLD Datasheet (PDF)
psmn0r9-30yld.pdf
PSMN0R9-30YLDN-channel 30 V, 0.87 m logic level MOSFET in LFPAK56using NextPowerS3 Technology11 November 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFE
psmn0r9-30uld.pdf
PSMN0R9-30ULDN-channel 30 V, 0.87 m, 300 A logic level MOSFETin SOT1023A enhanced package for UL2595, usingNextPowerS3 Schottky-Plus Technology23 May 2018 Product data sheet1. General descriptionSOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logiclevel gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3portfolio util
psmn0r9-25ylc.pdf
PSMN0R9-25YLCN-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 4 July 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn0r9-25ylc.pdf
PSMN0R9-25YLCN-channel 25 V 0.99 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 4 July 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn0r9-25yld.pdf
PSMN0R9-25YLDN-channel 25 V, 0.85 m, 300 A logic level MOSFET inLFPAK56 using NextPowerS3 Technology27 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated w
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