PSMN1R0-30YLD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN1R0-30YLD
Маркировка: 1D030L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 238 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.2 V
Максимально допустимый постоянный ток стока |Id|: 100 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 80.9 nC
Время нарастания (tr): 44.4 ns
Выходная емкость (Cd): 2424 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0013 Ohm
Тип корпуса: LFPAK56
Аналог (замена) для PSMN1R0-30YLD
PSMN1R0-30YLD Datasheet (PDF)
psmn1r0-30yld.pdf
PSMN1R0-30YLDN-channel 30 V, 1.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology19 September 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFE
psmn1r0-30ylc.pdf
PSMN1R0-30YLCN-channel 30 V 1.15 m logic level MOSFET in LFPAKRev. 03 17 January 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High reliability Powe
psmn1r0-30ylc.pdf
PSMN1R0-30YLCN-channel 30 V 1.15 m logic level MOSFET in LFPAK usingNextPower technology15 January 2015 Product data sheet1. General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High reliability Power SO8
psmn1r0-40ssh.pdf
PSMN1R0-40SSHN-channel 40 V, 1 m, 325 Amps continuous, standard levelMOSFET in LFPAK88 using NextPowerS3 Technology1 May 2019 Product data sheet1. General description325 Amp continuous current, standard level gate drive, N-channel enhancement mode MOSFETin LFPAK88 package. NextPowerS3 family using Nexperias unique SchottkyPlus technologydelivers high efficiency and low
psmn1r0-40yld.pdf
PSMN1R0-40YLDN-channel 40 V 1.1 m logic level MOSFET in LFPAK56 usingNextPower-S3 Schottky-Plus technology25 August 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56package using advanced TrenchMOS Superjunction technology. This product has beendesigned and qualified for high performance power switching appli
psmn1r0-40uld.pdf
PSMN1R0-40ULDN-channel 40 V, 1.1 m, 280 A logic level MOSFET inSOT1023A enhanced package for UL2595, using NextPower-S3 Schottky-Plus technology23 May 2018 Product data sheet1. General descriptionSOT1023A with improved creepage and clearance to meet UL2595 requirements 280 Amp, logiclevel gate drive N-channel enhancement mode MOSFET in 150 C LFPAK56 package usingadvanced Tre
psmn1r0-40ysh.pdf
PSMN1R0-40YSHN-channel 40 V, 1 m, 290 A standard level MOSFET inLFPAK56E using NextPower-S3 Schottky-Plus technology25 April 2019 Product data sheet1. General description290 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56Epackage using advanced TrenchMOS Superjunction technology. This product has been designedand qualified for high performance
psmn1r0-25yld.pdf
PSMN1R0-25YLDN-channel 25 V, 1.0 m, 240 A logic level MOSFET inLFPAK56 using NextPowerS3 Technology19 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated wi
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