PSMN1R2-30YLD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN1R2-30YLD
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 194 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.2 V
Максимально допустимый постоянный ток стока |Id|: 100 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 68 nC
Время нарастания (tr): 31 ns
Выходная емкость (Cd): 2079 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0016 Ohm
Тип корпуса: LFPAK56
Аналог (замена) для PSMN1R2-30YLD
PSMN1R2-30YLD Datasheet (PDF)
psmn1r2-30yld.pdf
PSMN1R2-30YLDN-channel 30 V, 1.2 m logic level MOSFET in LFPAK56using NextPowerS3 Technology30 May 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFETs wit
psmn1r2-30ylc.pdf
PSMN1R2-30YLCN-channel 30 V 1.25m logic level MOSFET in LFPAK using NextPower technologyRev. 1 3 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn1r2-30ylc.pdf
PSMN1R2-30YLCN-channel 30 V 1.25m logic level MOSFET in LFPAK using NextPower technologyRev. 1 3 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn1r2-25ylc.pdf
PSMN1R2-25YLCN-channel 25 V 1.3 m logic level MOSFET in LFPAK using NextPower technologyRev. 1 2 May 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits
psmn1r2-25yl.pdf
PSMN1R2-25YLN-channel 25 V 1.2 m logic level MOSFET in LFPAKRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS pro
psmn1r2-25yld.pdf
PSMN1R2-25YLDN-channel 25 V, 1.2 m, 230 A logic level MOSFET inLFPAK56 using NextPowerS3 Technology19 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated wi
psmn1r2-25yl.pdf
PSMN1R2-25YLN-channel 25 V 1.2 m logic level MOSFET in LFPAKRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in LFPAK package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS pro
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