PSMN2R5-60PL - описание и поиск аналогов

PSMN2R5-60PL N-channel 60 V, 2.6 m logic level MOSFET in SOT78 27 February 2013 Product data sheet 1. General description Logic level N-channel MOSFET in SOT78 using TrenchMOS technology. Product design and manufacture has been optimized for use in battery operated power tools. 2. Features and benefits High efficiency due to low switching & conduction losses Robust constructi

isc N-Channel MOSFET Transistor PSMN2R5-60PL FEATURES Drain Current I = 150A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 2.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

PSMN2R5-30YL N-channel 30 V 2.4 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benef

PSMN2R5-40YLD N-channel 40 V, 2.6 m , 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 27 August 2019 Product data sheet 1. General description 160 A, logic level gate drive N-channel enhancement mode MOSFET in 175 C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power

PSMN2R5-30YL N-channel 30 V 2.4 m logic level MOSFET in LFPAK Rev. 04 10 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benef