PSMN3R0-60BS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN3R0-60BS
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 306 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 110 nC
trⓘ - Время нарастания: 26 ns
Cossⓘ - Выходная емкость: 971 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0032 Ohm
Тип корпуса: D2PAK
Аналог (замена) для PSMN3R0-60BS
PSMN3R0-60BS Datasheet (PDF)
psmn3r0-60bs.pdf
PSMN3R0-60BSN-channel 60 V 3.2 m standard level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici
psmn3r0-60bs.pdf
isc N-Channel MOSFET Transistor PSMN3R0-60BSFEATURESDrain Current I = 83.4A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
psmn3r0-60ps.pdf
PSMN3R0-60PSN-channel 60 V 3.0 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due
psmn3r0-60es.pdf
PSMN3R0-60ESN-channel 60 V 3.0 m standard level MOSFET in I2PAK.3 June 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET in a I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduct
psmn3r0-60ps.pdf
PSMN3R0-60PSN-channel 60 V 3.0 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due
psmn3r0-60es.pdf
isc N-Channel MOSFET Transistor PSMN3R0-60ESFEATURESDrain Current I = 83.4A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
psmn3r0-60ps.pdf
isc N-Channel MOSFET Transistor PSMN3R0-60PSFEATURESDrain Current I = 83.4A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 3.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918