Справочник MOSFET. PSMN3R3-80ES

 

PSMN3R3-80ES MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN3R3-80ES
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 338 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 135 nC
   trⓘ - Время нарастания: 43 ns
   Cossⓘ - Выходная емкость: 847 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm
   Тип корпуса: I2PAK

 Аналог (замена) для PSMN3R3-80ES

 

 

PSMN3R3-80ES Datasheet (PDF)

 ..1. Size:184K  nxp
 psmn3r3-80es.pdf

PSMN3R3-80ES PSMN3R3-80ES

PSMN3R3-80ESN-channel 80 V, 3.3 m standard level MOSFET in I2PAKRev. 1 31 October 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

 ..2. Size:255K  inchange semiconductor
 psmn3r3-80es.pdf

PSMN3R3-80ES PSMN3R3-80ES

isc N-Channel MOSFET Transistor PSMN3R3-80ESFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 4.1. Size:191K  nxp
 psmn3r3-80ps.pdf

PSMN3R3-80ES PSMN3R3-80ES

PSMN3R3-80PSN-channel 80 V, 3.3 m standard level MOSFET in TO-220Rev. 1 27 October 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO-220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici

 4.2. Size:222K  nxp
 psmn3r3-80bs.pdf

PSMN3R3-80ES PSMN3R3-80ES

PSMN3R3-80BSN-channel 80 V, 3.5 m standard level MOSFET in D2PAKRev. 2 29 February 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficie

 4.3. Size:261K  inchange semiconductor
 psmn3r3-80ps.pdf

PSMN3R3-80ES PSMN3R3-80ES

isc N-Channel MOSFET Transistor PSMN3R3-80PSFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 4.4. Size:255K  inchange semiconductor
 psmn3r3-80bs.pdf

PSMN3R3-80ES PSMN3R3-80ES

isc N-Channel MOSFET Transistor PSMN3R3-80BSFEATURESDrain Current I = 120A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 3.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

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