PSMN4R4-30MLC Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: PSMN4R4-30MLC
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 69 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 70 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 23.2 ns
Cossⓘ - Выходная емкость: 333 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.00465 Ohm
Тип корпуса: LFPAK33
Аналог (замена) для PSMN4R4-30MLC
PSMN4R4-30MLC Datasheet (PDF)
psmn4r4-30mlc.pdf

PSMN4R4-30MLCN-channel 30 V 4.65 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 3 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and ben
psmn4r4-80ps.pdf

PSMN4R4-80PSN-channel 80 V, 4.1 m standard level FETRev. 01 18 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.
psmn4r4-80ps.pdf

PSMN4R4-80PSN-channel 80 V, 4.1 m standard level FETRev. 01 18 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.
psmn4r4-80bs.pdf

PSMN4R4-80BSN-channel 80 V, 4.5 m standard level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effici
Другие MOSFET... PSMN4R0-30YLD , PSMN4R0-60YS , PSMN4R2-30MLD , PSMN4R2-60PL , PSMN4R3-100ES , PSMN4R3-100PS , PSMN4R3-30BL , PSMN4R3-80BS , P55NF06 , PSMN4R4-80BS , PSMN4R5-40BS , PSMN4R6-100XS , PSMN4R6-60BS , PSMN4R8-100BSE , PSMN4R8-100PSE , PSMN5R0-100XS , PSMN5R0-80BS .
History: R6020KNJ | SJMN380R80ZB | GP3139 | WML03N80M3 | WM06N03FB | STP25N10F7 | SIR422DP-T1-GE3
History: R6020KNJ | SJMN380R80ZB | GP3139 | WML03N80M3 | WM06N03FB | STP25N10F7 | SIR422DP-T1-GE3



Список транзисторов
Обновления
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
bu406 | j201 datasheet | 2n5088 datasheet | irfp064n | tip31 transistor | 2sc1384 | mj21196g | irfb4115