Справочник MOSFET. PSMN4R5-40BS

 

PSMN4R5-40BS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PSMN4R5-40BS
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 148 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 35 nC
   trⓘ - Время нарастания: 23 ns
   Cossⓘ - Выходная емкость: 660 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
   Тип корпуса: D2PAK
     - подбор MOSFET транзистора по параметрам

 

PSMN4R5-40BS Datasheet (PDF)

 ..1. Size:215K  nxp
 psmn4r5-40bs.pdf pdf_icon

PSMN4R5-40BS

PSMN4R5-40BSN-channel 40 V 4.5 m standard level MOSFET in D2PAKRev. 1 22 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficie

 4.1. Size:231K  philips
 psmn4r5-40ps.pdf pdf_icon

PSMN4R5-40BS

PSMN4R5-40PSN-channel 40 V 4.6 m standard level MOSFETRev. 02 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to lo

 4.2. Size:733K  nxp
 psmn4r5-40ps.pdf pdf_icon

PSMN4R5-40BS

PSMN4R5-40PSN-channel 40 V 4.6 m standard level MOSFETRev. 02 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to lo

 6.1. Size:328K  philips
 psmn4r5-30ylc.pdf pdf_icon

PSMN4R5-40BS

PSMN4R5-30YLCN-channel 30 V 4.8 m logic level MOSFET in LFPAK using NextPower technologyRev. 3 5 July 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

ПОКАЗАТЬ ЕЩЁ

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History: PSMN035-150B | ME2345AS

 

 
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