PSMN5R6-100BS. Аналоги и основные параметры
Наименование производителя: PSMN5R6-100BS
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 306 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 46 ns
Cossⓘ - Выходная емкость: 561 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0056 Ohm
Тип корпуса: D2PAK
Аналог (замена) для PSMN5R6-100BS
- подборⓘ MOSFET транзистора по параметрам
PSMN5R6-100BS даташит
psmn5r6-100bs.pdf
PSMN5R6-100BS N-channel 100 V 5.6 m standard level MOSFET in D2PAK Rev. 1 20 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High eff
psmn5r6-100bs.pdf
isc N-Channel MOSFET Transistor PSMN5R6-100BS FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 5.6m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and
psmn5r6-100ps.pdf
PSMN5R6-100PS N-channel 100 V 5.6 m standard level MOSFET in TO220 Rev. 03 2 December 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High eff
psmn5r6-100ps.pdf
PSMN5R6-100PS N-channel 100 V 5.6 m standard level MOSFET in TO220 30 November 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due
Другие MOSFET... PSMN4R4-80BS , PSMN4R5-40BS , PSMN4R6-100XS , PSMN4R6-60BS , PSMN4R8-100BSE , PSMN4R8-100PSE , PSMN5R0-100XS , PSMN5R0-80BS , IRF630 , PSMN6R0-30YLD , PSMN6R1-30YLD , PSMN6R3-120ES , PSMN6R3-120PS , PSMN6R5-80BS , PSMN7R0-100BS , PSMN7R0-30MLC , PSMN7R5-30MLD .
History: APT10040B2VR | JMPF630BJ | HM1P15MR
History: APT10040B2VR | JMPF630BJ | HM1P15MR
🌐 : EN ES РУ
Список транзисторов
Обновления
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
k3569 | irf640 datasheet | c945 transistor equivalent | irfz44 datasheet | tip3055 transistor | irf530 datasheet | 2sc2625 | 2sc1815 transistor




