PSMN6R1-30YLD
MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PSMN6R1-30YLD
Маркировка: 6D130L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 47
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 66
A
Tjⓘ - Максимальная температура канала: 175
°C
Qgⓘ -
Общий заряд затвора: 14.2
nC
trⓘ -
Время нарастания: 11
ns
Cossⓘ - Выходная емкость: 605
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006
Ohm
Тип корпуса:
LFPAK56
Аналог (замена) для PSMN6R1-30YLD
PSMN6R1-30YLD
Datasheet (PDF)
..1. Size:278K nxp
psmn6r1-30yld.pdf 
PSMN6R1-30YLDN-channel 30 V, 6.1 m logic level MOSFET in LFPAK56using NextPowerS3 Technology19 September 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFE
8.1. Size:383K philips
psmn6r0-30yl.pdf 
PSMN6R0-30YLN-channel 30 V 6 m logic level MOSFET in LFPAKRev. 04 10 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefit
8.2. Size:222K philips
psmn6r5-80ps.pdf 
PSMN6R5-80PSN-channel 80 V 6.9 m standard level MOSFET in TO220Rev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien
8.3. Size:324K nxp
psmn6r0-30yld.pdf 
PSMN6R0-30YLDN-channel 30 V, 6.0 m logic level MOSFET in LFPAK56using NextPowerS3 Technology10 February 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFET
8.4. Size:229K nxp
psmn6r5-80bs.pdf 
PSMN6R5-80BSN-channel 80V 6.9m standard level MOSFET in D2PAKRev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
8.5. Size:910K nxp
psmn6r0-30ylb.pdf 
PSMN6R0-30YLBN-channel 30 V 6.5 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 24 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef
8.6. Size:250K nxp
psmn6r3-120es.pdf 
PSMN6R3-120ESN-channel 120 V 6.7 m standard level MOSFET in I2PAK8 May 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic power supply equipment.2. Features and benefits High efficiency due to low switching
8.7. Size:898K nxp
psmn6r5-25ylc.pdf 
PSMN6R5-25YLCN-channel 25 V 6.5 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 31 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef
8.8. Size:910K nxp
psmn6r0-25ylb.pdf 
PSMN6R0-25YLBN-channel 25 V 6.1 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 31 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benef
8.9. Size:281K nxp
psmn6r9-100ysf.pdf 
PSMN6R9-100YSFNextPower 100 V, 7 m N-channel MOSFET in LFPAK56package8 December 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Low Qrr for higher efficiency and lower spiking Qualified to 175 C Low QG x RDSon FOM for
8.10. Size:288K nxp
psmn6r4-30mld.pdf 
PSMN6R4-30MLDN-channel 30 V, 6.4 m logic level MOSFET in LFPAK33 usingNextPowerS3 Technology21 January 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. TheNextPowerS3 portfolio, utilising Nexperias unique SchottkyPlus technology, delivers highefficiency and the low spiking performance usually as
8.11. Size:286K nxp
psmn6r5-30mld.pdf 
PSMN6R5-30MLDN-channel 30 V, 6.5 m logic level MOSFET in LFPAK33 usingNextPowerS3 Technology21 January 2019 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in an LFPAK33 package. TheNextPowerS3 portfolio, utilising Nexperias unique SchottkyPlus technology, delivers highefficiency and the low spiking performance usually as
8.12. Size:721K nxp
psmn6r0-25yld.pdf 
PSMN6R0-25YLDN-channel 25 V, 6.75 m logic level MOSFET in LFPAK56using NextPowerS3 Technology6 April 2016 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSF
8.13. Size:299K nxp
psmn6r7-40mld.pdf 
PSMN6R7-40MLDN-channel 40 V, 6.7 m, logic level MOSFET in LFPAK33using NextPower-S3 technology14 August 2019 Product data sheet1. General description50 A, logic level N-channel enhancement mode MOSFET in 175 C LFPAK33 package usingadvanced TrenchMOS Superjunction technology. This product has been designed and qualified forhigh efficiency applications operating at high switchin
8.14. Size:307K nxp
psmn6r7-40msd.pdf 
PSMN6R7-40MSDN-channel 40 V, 6.7 m, standard level MOSFET in LFPAK33using NextPower-S3 technology11 November 2019 Product data sheet1. General description50 A, standard level N-channel enhancement mode MOSFET in 175 C LFPAK33 package usingadvanced TrenchMOS Superjunction technology. This product has been designed and qualified forhigh efficiency applications at high switching
8.15. Size:818K nxp
psmn6r5-80ps.pdf 
PSMN6R5-80PSN-channel 80 V 6.9 m standard level MOSFET in TO220Rev. 02 1 November 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien
8.16. Size:266K nxp
psmn6r3-120ps.pdf 
PSMN6R3-120PSN-channel 120 V 6.7 m standard level MOSFET in TO-2207 June 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO-220 package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic power supply equipment.2. Features and benefits High efficiency due to low switchi
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