Справочник MOSFET. PSMN7R5-30YLD

 

PSMN7R5-30YLD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PSMN7R5-30YLD
   Маркировка: 7D530L
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 34 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 51 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 11.3 nC
   trⓘ - Время нарастания: 10.4 ns
   Cossⓘ - Выходная емкость: 578 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
   Тип корпуса: LFPAK56

 Аналог (замена) для PSMN7R5-30YLD

 

 

PSMN7R5-30YLD Datasheet (PDF)

 ..1. Size:283K  nxp
psmn7r5-30yld.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

PSMN7R5-30YLDN-channel 30 V, 7.5 m logic level MOSFET in LFPAK56using NextPowerS3 Technology7 February 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFETs

 4.1. Size:275K  nxp
psmn7r5-30mld.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

PSMN7R5-30MLDN-channel 30 V, 7.5 m logic level MOSFET in LFPAK33using NextPowerS3 Technology12 March 2014 Product data sheet1. General descriptionLogic level gate drive N-channel enhancement mode MOSFET in LFPAK33 package.NextPowerS3 portfolio utilising NXPs unique SchottkyPlus technology delivershigh efficiency, low spiking performance usually associated with MOSFETs w

 6.1. Size:762K  nxp
psmn7r5-60yl.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

PSMN7R5-60YLN-channel 60 V, 7.5 m logic level MOSFET in LFPAK5620 November 2015 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon

 8.1. Size:375K  philips
psmn7r0-40ls.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

PSMN7R0-40LSN-channel QFN3333 40 V 7.0 m standard level MOSFETRev. 2 18 August 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High effic

 8.2. Size:238K  philips
psmn7r0-60ys.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

PSMN7R0-60YSN-channel LFPAK 60 V 6.4 m standard level MOSFETRev. 02 30 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

 8.3. Size:385K  philips
psmn7r0-30yl.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

PSMN7R0-30YLN-channel 30 V 7 m logic level MOSFET in LFPAKRev. 04 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

 8.4. Size:213K  philips
psmn7r6-60ps.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

PSMN7R6-60PSN-channel 60 V 7.8 m standard level MOSFETRev. 03 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due

 8.5. Size:241K  philips
psmn7r0-100es.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

PSMN7R0-100ESN-channel 100V 6.8 m standard level MOSFET in I2PAK.Rev. 03 23 February 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

 8.6. Size:243K  philips
psmn7r0-100ps.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

PSMN7R0-100PSN-channel 100V 6.8 m standard level MOSFET in TO220Rev. 02 7 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

 8.7. Size:249K  nxp
psmn7r8-120es.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

PSMN7R8-120ESN-channel 120 V 7.9 m standard level MOSFET in I2PAK18 February 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in I2PAK package qualified to 175 C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic power supply equipment.2. Features and benefits High efficiency due to low swit

 8.8. Size:223K  nxp
psmn7r0-100bs.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

PSMN7R0-100BSN-channel 100V 6.8 m standard level MOSFET in D2PAK.Rev. 2 2 March 2012 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

 8.9. Size:803K  nxp
psmn7r0-60ys.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

PSMN7R0-60YSN-channel LFPAK 60 V 6.4 m standard level MOSFETRev. 02 30 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

 8.10. Size:974K  nxp
psmn7r0-30yl.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

PSMN7R0-30YLN-channel 30 V 7 m logic level MOSFET in LFPAKRev. 04 9 March 2011 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.1.2 Features and benefits

 8.11. Size:290K  nxp
psmn7r8-100pse.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

PSMN7R8-100PSEN-channel 100 V 7.8 m standard level MOSFET withimproved SOA in TO220 package11 August 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET with improved SOA in a TO220 package. Part ofNXP's "NextPower Live" portfolio, the PSMN7R8-100PSE is robust enough to withstandsubstantial in-rush and fault condition currents during turn on/off, whilst

 8.12. Size:276K  nxp
psmn7r6-100bse.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

PSMN7R6-100BSEN-channel 100 V 7.6 m standard level MOSFET in D2PAK18 December 2012 Product data sheet1. General descriptionStandard level N-channel MOSFET in a D2PAK package qualified to 175 C. Part ofNXP's "NextPower Live" portfolio, the PSMN7R6-100BSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn on,whilst

 8.13. Size:771K  nxp
psmn7r0-30ylc.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

PSMN7R0-30YLCN-channel 30 V 7.1 m logic level MOSFET in LFPAK using NextPower technologyTable 1. Quick reference data continuedSymbol Parameter Conditions Min Typ Max UnitDynamic characteristicsQGD gate-drain charge VGS =4.5V; ID =20A; - 2.5 - nCVDS =15V; see Figure 14; see Figure 15QG(tot) total gate charge VGS =4.5V; ID =20A; - 7.9 - nCVDS =15V; see Figure 14; see Fi

 8.14. Size:369K  nxp
psmn7r0-30mlc.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

PSMN7R0-30MLCN-channel 30 V 7 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 4 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefi

 8.15. Size:264K  nxp
psmn7r8-120ps.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

PSMN7R8-120PSN-channel 120V 7.9m standard level MOSFET in TO22025 January 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product isdesigned and qualified for use in a wide range of industrial, communications and powersupply equipment.2. Features and benefits High efficiency due to low switching and condu

 8.16. Size:256K  nxp
psmn7r6-60xs.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

PSMN7R6-60XSN-channel 60 V 7.8 m standard level MOSFET in TO220F(SOT186A)16 December 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET in a TO-220F (SOT186A) package qualified to175 C. This product is designed and qualified for use in a wide range of industrial,communications and power supply equipment.2. Features and benefits High efficiency

 8.17. Size:740K  nxp
psmn7r0-100ps.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

PSMN7R0-100PSN-channel 100V 6.8 m standard level MOSFET in TO220.17 October 2013 Product data sheet1. General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduc

 8.18. Size:223K  nxp
psmn7r6-60bs.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

PSMN7R6-60BSN-channel 60 V 7.8 m standard level MOSFET in D2PAKRev. 2 2 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficie

 8.19. Size:262K  inchange semiconductor
psmn7r6-60ps.pdf

PSMN7R5-30YLD
PSMN7R5-30YLD

isc N-Channel MOSFET Transistor PSMN7R6-60PSFEATURESDrain Current : I = 65A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , SKD502T , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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