Справочник MOSFET. XP161A11A1PR-G

 

XP161A11A1PR-G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: XP161A11A1PR-G
   Маркировка: 111*
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 150 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
   Тип корпуса: SOT-89
 

 Аналог (замена) для XP161A11A1PR-G

   - подбор ⓘ MOSFET транзистора по параметрам

 

XP161A11A1PR-G Datasheet (PDF)

 ..1. Size:312K  torex
 xp161a11a1pr-g.pdf pdf_icon

XP161A11A1PR-G

XP161A11A1PR-G ETR1122_003Power MOSFET GENERAL DESCRIPTION The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high densit

 2.1. Size:891K  cn vbsemi
 xp161a11a1pr.pdf pdf_icon

XP161A11A1PR-G

XP161A11A1PRwww.VBsemi.tw N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherw

 7.1. Size:284K  torex
 xp161a1265pr-g.pdf pdf_icon

XP161A11A1PR-G

XP161A1265PR-G ETR1123_003Power MOSFET GENERAL DESCRIPTION The XP161A1265PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high densit

 7.2. Size:309K  torex
 xp161a1355pr-g.pdf pdf_icon

XP161A11A1PR-G

XP161A1355PR-G ETR1124_003Power MOSFET GENERAL DESCRIPTION The XP161A1355PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high dens

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... PSMN9R8-30MLC , PSMNR90-30BL , XP151A11B0MR-G , XP151A12A2MR-G , XP151A13A0MR-G , XP152A11E5MR-G , XP152A12C0MR-G , XP161 , 10N65 , XP161A1265PR-G , XP161A1355PR-G , XP162A11C0PR-G , XP162A12A6PR-G , XP202A0003MR-G , XP202A0003PR-G , YTF830 , 2SK1029 .

History: AP9565AGH-HF | DMT3008LFDF | DMC1229UFDB

 

 
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