Справочник MOSFET. SVF2N60RD

 

SVF2N60RD MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SVF2N60RD
   Маркировка: 2N60RD
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 34 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 8.92 nC
   trⓘ - Время нарастания: 22.7 ns
   Cossⓘ - Выходная емкость: 30 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 4.2 Ohm
   Тип корпуса: TO252

 Аналог (замена) для SVF2N60RD

 

 

SVF2N60RD Datasheet (PDF)

 ..1. Size:614K  silan
 svf2n60rd svf2n60rm svf2n60rmj.pdf

SVF2N60RD SVF2N60RD

SVF2N60RD/M/MJ 2A600V N 2SVF2N60RD/M/MJ N MOS F-CellTM VDMOS 1133

 0.1. Size:401K  silan
 svf2n60rdtr svf2n60rm svf2n60rmj.pdf

SVF2N60RD SVF2N60RD

SVF2N60RD/M/MJ 2A600V N 2SVF2N60RD/M/MJ N MOS F-CellTM VDMOS 1 3

 7.1. Size:692K  silan
 svf2n60m svf2n60mj svf2n60nf svf2n60f svf2n60d.pdf

SVF2N60RD SVF2N60RD

SVF2N60M(MJ)(NF)(F)(D) 2A600V N 2SVF2N60M(MJ)(NF)(F)(D) N MOS 1 F-CellTM VDMOS 123 3TO-126F-3L

 7.2. Size:362K  silan
 svf2n60nf svf2n60f.pdf

SVF2N60RD SVF2N60RD

SVF2N60NF(F) 2A600V N 2SVF2N60NF(F) N MOS F-CellTM VDMOS 1 3

 7.3. Size:682K  silan
 svf2n60m-f-t-d.pdf

SVF2N60RD SVF2N60RD

SVF2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s

 7.4. Size:600K  silan
 svf2n60m svf2n60mj svf2n60n svf2n60f svf2n60t svf2n60d.pdf

SVF2N60RD SVF2N60RD

SVF2N60M/MJ/N/F/T/D 2A600V N SVF2N60M/MJ/N/F/T/D NMOSF-CellTMVDMOS

 7.5. Size:360K  silan
 svf2n60cn svf2n60cm svf2n60cf.pdf

SVF2N60RD SVF2N60RD

SVF2N60CN/M/F 2A600V N 2SVF2N60CN/M/F N MOS F-CellTM VDMOS 1 31. 2. 3

 7.6. Size:434K  silan
 svf2n60cn svf2n60cnf svf2n60cm svf2n60cmj svf2n60cf svf2n60cd.pdf

SVF2N60RD SVF2N60RD

SVF2N60CN/NF/M/MJ/F/D 2A600V N 2SVF2N60CN/NF/M/MJ/F/D N MOS 13 F-CellTM VDMOS TO-252-2L13

 7.7. Size:519K  silan
 svf2n60m svf2n60mj svf2n60n svf2n60nf svf2n60f svf2n60t svf2n60d.pdf

SVF2N60RD SVF2N60RD

SVF2N60M/MJ/N/NF/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION 2SVF2N60M(MJ)(N)(NF)(F)(T)(D) is an N-channel enhancement mode 13TO-252-2Lpower MOS field effect transistor which is produced using Silan 1proprietary F-CellTM structure VDMOS technology. The improved 31process and cell structure have been especially tailored to minimize 231.Gate 2.Dra

 7.8. Size:624K  silan
 svf2n60m svf2n60f svf2n60t svf2n60d.pdf

SVF2N60RD SVF2N60RD

SVF2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-cellTM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s

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