TSM2311CX MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TSM2311CX
Маркировка: 11*
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.9 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 6 nC
trⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 180 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
Тип корпуса: SOT-23
TSM2311CX Datasheet (PDF)
tsm2311cx.pdf
TSM2311 20V P-Channel MOSFET SOT-23 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 55 @ VGS = -4.5V -4.0 -20 85 @ VGS = -2.5V -2.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Orderi
tsm2314cx.pdf
TSM2314 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 20 100 @ VGS = 1.8V 2.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Orderin
tsm2310cx.pdf
TSM2310 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 33 @ VGS = 4.5V 4 3. Drain 20 40 @ VGS = 2.5V 3.2 100 @ VGS = 1.8V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Info
tsm2312cx.pdf
TSM2312 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 2. Source 33 @ VGS = 4.5V 4.9 3. Drain 20 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering In
tsm2318cx.pdf
TSM2318 40V N-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 3. Drain 45 @ VGS = 10V 3.9 40 62.5 @ VGS = 4.5V 3.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch Stepper Motors Ordering Information Pa
tsm2314cx.pdf
TSM2314CXwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC
tsm2312cx.pdf
TSM2312CXwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918