TSM2N60CH Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TSM2N60CH
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 25 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 21 ns
Cossⓘ - Выходная емкость: 56 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 4.4 Ohm
Тип корпуса: TO-251
TSM2N60CH Datasheet (PDF)
tsm2n60ch tsm2n60cp tsm2n60cz.pdf

TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 4.4 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFE
tsm2n60scw.pdf

TSM2N60S 600V N-Channel Power MOSFET SOT-223 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 5 @ VGS =10V 0.6 General Description The TSM2N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand
tsm2n70ch tsm2n70cp tsm2n70cz.pdf

TSM2N70 700V N-Channel Power MOSFET Pin Definition: TO-220 TO-251 TO-252 PRODUCT SUMMARY 1. Gate (IPAK) (DPAK) 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-st
Другие MOSFET... TSM2313CX , TSM2314CX , TSM2318CX , TSM2323CX , TSM2328CX , TSM23N50CN , TSM25N03CP , TSM2611EDCX6 , IRF840 , TSM2N60CP , TSM2N60CZ , TSM2N60SCW , TSM2N7000KCT , TSM2N7002KCU , TSM2N7002KCX , TSM2N7002KDCU6 , TSM2N70CH .
History: NCEAP15T14 | IRF9310PBF-1 | NVMFS6H836N
History: NCEAP15T14 | IRF9310PBF-1 | NVMFS6H836N



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