TSM4433CS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TSM4433CS
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 0.95 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3.9 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 15.23 nC
trⓘ - Время нарастания: 3.73 ns
Cossⓘ - Выходная емкость: 145.54 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
Тип корпуса: SOP-8
TSM4433CS Datasheet (PDF)
tsm4433cs.pdf
TSM4433 20V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 90 @ VGS = -4.5V -3.9 4. Gate -20 110 @ VGS = -2.5V -3.2 5, 6, 7, 8. Drain 150 @ VGS = -1.8V -2.6 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application
tsm4433dcs.pdf
TSM4433D 20V Dual P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 8. Drain 1 VDS (V) RDS(on)(m) ID (A) 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 90 @ VGS = -4.5V -3.9 4. Gate 2 5. Drain 2 -20 110 @ VGS = -2.5V -3.2 150 @ VGS = -1.8V -2.6 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Lo
tsm4431cs.pdf
TSM4431 30V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 2. Source VDS (V) RDS(on)(m) ID (A) 3. Source 40 @ VGS = -10V -5.8 4. Gate -30 5, 6, 7, 8. Drain 70 @ VGS = -4.5V -4.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conversion A
tsm4435cs.pdf
TSM4435 30V P-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source VDS (V) RDS(on)(m) ID (A) 2. Source 3. Source 21 @ VGS = -10V -9.1 4. Gate -30 35 @ VGS = -4.5V -6.9 5, 6, 7, 8. Drain Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conversion Ba
tsm4435bcs.pdf
TSM4435B 30V P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 8. Drain VDS (V) RDS(on)(m) ID (A) 2. Source 7. Drain 3. Source 6. Drain 21 @ VGS = -10V -9.1 4. Gate 5. Drain -30 35 @ VGS = -4.5V -6.9 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application DC-DC Conv
tsm4436cs.pdf
TSM4436 60V N-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 8. Drain 2. Source 7. Drain VDS (V) RDS(on)(m) ID (A) 3. Source 6. Drain 36 @ VGS = 10V 4.6 4. Gate 5. Drain 60 43 @ VGS = 4.5V 4.2 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application High-Side DC/DC
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