TSM4N60CI - аналоги и даташиты транзистора

 

TSM4N60CI - Даташиты. Аналоги. Основные параметры


   Наименование производителя: TSM4N60CI
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 25 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 35 ns
   Cossⓘ - Выходная емкость: 60 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm
   Тип корпуса: ITO-220
 
   - подбор ⓘ MOSFET транзистора по параметрам

 

TSM4N60CI Datasheet (PDF)

 ..1. Size:477K  taiwansemi
 tsm4n60ch tsm4n60ci tsm4n60cp tsm4n60cz.pdf pdf_icon

TSM4N60CI

TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a

 9.1. Size:373K  taiwansemi
 tsm4nd50cp.pdf pdf_icon

TSM4N60CI

TSM4ND50 500V N-Channel Power MOSFET TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 2.7 @ VGS =10V 1.5 General Description The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state res

 9.2. Size:166K  taiwansemi
 tsm4n80ci tsm4n80cz.pdf pdf_icon

TSM4N60CI

TSM4N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 800 3 @ VGS =10V 4 General Description The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s

 9.3. Size:395K  taiwansemi
 tsm4n90ci tsm4n90cz.pdf pdf_icon

TSM4N60CI

TSM4N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 4 @ VGS =10V 4 General Description The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... TSM4872CS , TSM4886CS , TSM4925DCS , TSM4936DCS , TSM4944DCS , TSM4946DCS , TSM4953DCS , TSM4N60CH , IRF520 , TSM4N60CP , TSM4N60CZ , TSM4N80CI , TSM4N80CZ , TSM4N90CI , TSM4N90CZ , TSM4NB60CH , TSM4NB60CI .

History: STN8822 | SSM3J108TU | WMC1N40D1

 

 
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