Справочник MOSFET. TSM4NB60CP

 

TSM4NB60CP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: TSM4NB60CP
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 53.2 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.5 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для TSM4NB60CP

 

 

TSM4NB60CP Datasheet (PDF)

 ..1. Size:490K  taiwansemi
 tsm4nb60ch tsm4nb60ci tsm4nb60cp tsm4nb60cz.pdf

TSM4NB60CP TSM4NB60CP

TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 2.5 @ VGS =10V 4 General Description The TSM4NB60 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resi

 9.1. Size:373K  taiwansemi
 tsm4nd50cp.pdf

TSM4NB60CP TSM4NB60CP

TSM4ND50 500V N-Channel Power MOSFET TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 2.7 @ VGS =10V 1.5 General Description The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state res

 9.2. Size:166K  taiwansemi
 tsm4n80ci tsm4n80cz.pdf

TSM4NB60CP TSM4NB60CP

TSM4N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 800 3 @ VGS =10V 4 General Description The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s

 9.3. Size:395K  taiwansemi
 tsm4n90ci tsm4n90cz.pdf

TSM4NB60CP TSM4NB60CP

TSM4N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 4 @ VGS =10V 4 General Description The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s

 9.4. Size:477K  taiwansemi
 tsm4n60ch tsm4n60ci tsm4n60cp tsm4n60cz.pdf

TSM4NB60CP TSM4NB60CP

TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top