TSM7N65CI Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: TSM7N65CI
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 30 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 115 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
Тип корпуса: ITO-220
Аналог (замена) для TSM7N65CI
TSM7N65CI Datasheet (PDF)
tsm7n65ci.pdf

TSM7N65 650V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 650 1.2 @ VGS =10V 6.4 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
tsm7n65cz.pdf

TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 650 1.2 @ VGS =10V 3 General Description The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide supe
tsm7n60ci tsm7n60cz.pdf

TSM7N60 600V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 600 1.2 @ VGS =10V 3.5 General Description The TSM7N60 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide su
tsm7n90ci tsm7n90cz.pdf

TSM7N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 1.9 @ VGS =10V 3.5 General Description The TSM7N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provi
Другие MOSFET... TSM6N50CP , TSM70N10CP , TSM7401CS , TSM75N03CP , TSM75N75CZ , TSM7900DCQ , TSM7N60CI , TSM7N60CZ , IRFP260N , TSM7N65CZ , TSM7N90CI , TSM7N90CZ , TSM802CQ , TSM80N08CZ , TSM85N10CZ , TSM8N50CH , TSM8N50CP .
History: NCE60NF200D | AFP2301 | PTY12HN06 | FDZ7296 | SSF2816EB | 2SK2765-01 | MP18N50EIF
History: NCE60NF200D | AFP2301 | PTY12HN06 | FDZ7296 | SSF2816EB | 2SK2765-01 | MP18N50EIF



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