TSM9NB50CI - Даташиты. Аналоги. Основные параметры
Наименование производителя: TSM9NB50CI
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 48 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 46.8 ns
Cossⓘ - Выходная емкость: 129 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.85 Ohm
Тип корпуса: ITO-220
Аналог (замена) для TSM9NB50CI
TSM9NB50CI Datasheet (PDF)
tsm9nb50ci tsm9nb50cz.pdf

TSM9NB50 500V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 0.85 @ VGS =10V 9 General Description The TSM9NB50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, prov
tsm9n50ci tsm9n50cz.pdf

Preliminary TSM9N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Gate 2. Drain VDS (V) RDS(on)() ID (A) 3. Source 500 0.85 @ VGS =10V 4.8 General Description The TSM9N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resista
tsm9n90cn.pdf

TSM9N90CN 900V N-Channel Power MOSFET TO-3PN PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 1.4 @ VGS =10V 9.5 General Description The TSM9N90CN N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
tsm9n90ci tsm9n90cz.pdf

TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 1.4 @ VGS =10V 9 General Description The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
Другие MOSFET... TSM9926DCS , TSM9933DCS , TSM9966DCX6 , TSM9N50CI , TSM9N50CZ , TSM9N90CI , TSM9N90CN , TSM9N90CZ , AON7410 , TSM9NB50CZ , TSU45N60 , TT8J11 , TT8J13 , TT8J2 , TT8J21 , TT8J3 , TT8K1 .
History: AP3P010YT | HD40N04 | 2SK3556-01L | AO7408 | SGSP351 | IRHMB57Z60 | SSM3J132TU
History: AP3P010YT | HD40N04 | 2SK3556-01L | AO7408 | SGSP351 | IRHMB57Z60 | SSM3J132TU



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