Справочник MOSFET. BUK114-50L-S

 

BUK114-50L-S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK114-50L-S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 50 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 15 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 275 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm
   Тип корпуса: SOT-426

 Аналог (замена) для BUK114-50L-S

 

 

BUK114-50L-S Datasheet (PDF)

 ..1. Size:111K  philips
buk114-50l-s.pdf

BUK114-50L-S
BUK114-50L-S

Philips Semiconductors Product specification Logic level TOPFET BUK114-50L/S SMD version of BUK104-50L/S DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin surface VDS Continuous drain source voltage 50 Vmounting plastic envelope, intended ID Continuous drain current 15 Aas a general purpose

 ..2. Size:113K  philips
buk114-50l-s 1.pdf

BUK114-50L-S
BUK114-50L-S

Philips Semiconductors Product specification Logic level TOPFET BUK114-50L/S SMD version of BUK104-50L/S DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin surface VDS Continuous drain source voltage 50 Vmounting plastic envelope, intended ID Continuous drain current 15 Aas a general purpose

 9.1. Size:87K  philips
buk110-50gl 1.pdf

BUK114-50L-S
BUK114-50L-S

Philips Semiconductors Product specification PowerMOS transistor BUK110-50GL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 45 Ageneral purpose switch for P

 9.2. Size:44K  philips
buk118-50dl.pdf

BUK114-50L-S
BUK114-50L-S

Philips Semiconductors Product specification Logic level TOPFET BUK118-50DL DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin plastic ID Continuous drain current 16 Apackage. PD Total power dissipation 65 WTj Continuous

 9.3. Size:72K  philips
buk110-50dl 1.pdf

BUK114-50L-S
BUK114-50L-S

Philips Semiconductors Product specification PowerMOS transistor BUK110-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 3 pin plastic surface VDS Continuous drain source voltage 50 Vmount envelope, intended as a ID Continuous drain current 45 Ageneral purpose switch for P

 9.4. Size:44K  philips
buk119-50dl.pdf

BUK114-50L-S
BUK114-50L-S

Philips Semiconductors Product specification Logic level TOPFET BUK119-50DL DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in TOPFET2 technology VDS Continuous drain source voltage 50 Vassembled in a 3 pin plastic ID Continuous drain current 20 Apackage. PD Total power dissipation 90 WTj Continuous

 9.5. Size:91K  philips
buk112-50gl 1.pdf

BUK114-50L-S
BUK114-50L-S

Philips Semiconductors Product specification PowerMOS transistor BUK112-50GL Logic level TOPFET DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin plastic VDS Continuous drain source voltage 50 Venvelope, intended as a low side ID Continuous drain current 12 Aswitch for automotive applicatio

 9.6. Size:93K  philips
buk111-50gl 1.pdf

BUK114-50L-S
BUK114-50L-S

Philips Semiconductors Product specification Logic level TOPFET BUK111-50GL SMD version of BUK112-50GL DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin plastic SMD VDS Continuous drain source voltage 50 Venvelope, intended as a low side ID Continuous drain current 12 Aswitch for automotive

 9.7. Size:108K  philips
buk116-50l-s 1.pdf

BUK114-50L-S
BUK114-50L-S

Philips Semiconductors Product specification Logic level TOPFET BUK116-50L/S SMD version of BUK106-50L/S DESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected logic level powerMOSFET in a 5 pin surface VDS Continuous drain source voltage 50 Vmounting plastic envelope, intended ID Continuous drain current 50 Aas a general purpose

 9.8. Size:32K  philips
buk113-50dl 1.pdf

BUK114-50L-S
BUK114-50L-S

Philips Semiconductors Objective specification PowerMOS transistor BUK113-50DL Logic level TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic overload protected logic SYMBOL PARAMETER MIN. MAX. UNITlevel power MOSFET in a surfacemount plastic envelope, intended as VDS Continuous drain source voltage - 50 Va general purpose switch forautomotive systems and other ID Drain current l

 9.9. Size:89K  philips
buk110-50gs 1.pdf

BUK114-50L-S
BUK114-50L-S

Philips Semiconductors Product specification PowerMOS transistor BUK110-50GS TOPFETDESCRIPTION QUICK REFERENCE DATAMonolithic temperature and SYMBOL PARAMETER MAX. UNIToverload protected power MOSFETin a 3 pin plastic surface mount VDS Continuous drain source voltage 50 Venvelope, intended as a general ID Continuous drain current 50 Apurpose switch for automotive PD Total power

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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