BUK7213-40A - описание и поиск аналогов

BUK7213-40A TrenchMOS standard level FET Rev. 01 29 January 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible 1.3 Applications

BUK7213-40A TrenchMOS standard level FET Rev. 01 29 January 2004 Product data M3D300 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips General-Purpose Automotive TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Standard level compatible 1.3 Applications

BUK7210-55B N-channel TrenchMOS standard level FET Rev. 01 11 December 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in

BUK7219-55A TrenchMOS standard level FET Rev. 01 02 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology, featuring very low on-state resistance. Product availability BUK7219-55A in SOT428 (D-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated Stan

BUK7215-55A N-channel TrenchMOS standard level FET Rev. 02 27 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2

BUK7219-55A N-channel TrenchMOS standard level FET Rev. 02 3 February 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2

BUK7210-55B N-channel TrenchMOS standard level FET Rev. 01 11 December 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for u

BUK72150-55A N-channel TrenchMOS standard level FET Rev. 03 26 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.