BUK7505-30A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK7505-30A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 230 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Максимально допустимый постоянный ток стока |Id|: 75 A
Максимальная температура канала (Tj): 175 °C
Время нарастания (tr): 130 ns
Выходная емкость (Cd): 1500 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.005 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для BUK7505-30A
BUK7505-30A Datasheet (PDF)
buk7505-30a.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7505-30A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology which features ID Drain current (DC) 75 Avery low on-state resis
buk7506-55a buk7606-55a.pdf
BUK7506-55A; BUK7606-55ATrenchMOS standard level FETRev. 02 03 July 2001 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7506-55A in SOT78 (TO-220AB)BUK7606-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q10
buk7508-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7508-55 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 75 Afeatures very low on-state
buk7506-55a 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7506-55A Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology which features ID Drain current (DC) 75 Avery low on-state resis
buk7509 buk7609 75a 02.pdf
BUK7509-75A; BUK7609-75ATrenchMOS standard level FETRev. 02 06 November 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7509-75A in SOT78 (TO-220AB)BUK7609-75A in SOT404 (D 2-PAK).2. Features TrenchMOS te
buk7507-55b buk7607-55b.pdf
BUK75/7607-55BTrenchMOS standard level FETRev. 01 15 May 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK7507-55B in SOT78 (TO-220AB)BUK7607-55B in SOT404 (D2-PAK).1.2 Features Very low on-stat
buk7508 buk7608-55a 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7508-55A Standard level FET BUK7608-55AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vavailable in TO220AB and SOT404 . ID Drain current (DC) 75 AUsing trench tec
buk7506-75b buk7606-75b.pdf
BUK75/7606-75BTrenchMOS standard level FETRev. 02 20 September 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK7506-75B in SOT78 (TO-220AB)BUK7606-75B in SOT404 (D2-PAK).1.2 Features Very low on-stat
buk7509-55a buk7609-55a.pdf
BUK75/7609-55ATrenchMOS standard level FETRev. 01 6 August 2002 Product data1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7509-55A in SOT78 (TO-220AB)BUK7609-55A in SOT404 (D2-PAK).2. Features TrenchMOS technology Q101 complia
buk7507-30b buk7607-30b.pdf
BUK75/7607-30BTrenchMOS standard level FETRev. 01 07 April 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK7507-30B in SOT78 (TO-220AB)BUK7607-30B in SOT404 (D2-PAK).1.2 Features Very low on-st
buk7509-75a buk7609-75a.pdf
BUK7509-75A; BUK7609-75ATrenchMOS standard level FETRev. 02 06 November 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK7509-75A in SOT78 (TO-220AB)BUK7609-75A in SOT404 (D 2-PAK).2. Features TrenchMOS te
buk7506-30 1.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK7506-30 Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 30 Vtrench technology. The device ID Drain current (DC) 75 Afeatures very low on-state
buk7509-55a.pdf
BUK7509-55Awww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.005 at VGS = 10 V 120 Material categorization:600.008 at VGS = 7.5 V100TO-220ABDGSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit
buk7506-55a.pdf
isc N-Channel MOSFET Transistor BUK7506-55AFEATURESStatic drain-source on-resistance:RDS(on) 6.3mFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONAutomotive and general purpose power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour
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