BUK753R1-40E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK753R1-40E
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 234 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 100 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 79 nC
Время нарастания (tr): 29 ns
Выходная емкость (Cd): 885 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0031 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для BUK753R1-40E
BUK753R1-40E Datasheet (PDF)
buk753r1-40e.pdf
BUK753R1-40EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe
buk753r1-40b buk763r1-40b.pdf
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buk753r5-60e.pdf
BUK753R5-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe
buk753r8-80e.pdf
BUK753R8-80EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe
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