Справочник MOSFET. BUK7E1R6-30E

 

BUK7E1R6-30E Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK7E1R6-30E
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 349 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 154 nC
   trⓘ - Время нарастания: 64 ns
   Cossⓘ - Выходная емкость: 2020 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0016 Ohm
   Тип корпуса: I2PAK
     - подбор MOSFET транзистора по параметрам

 

BUK7E1R6-30E Datasheet (PDF)

 ..1. Size:208K  nxp
 buk7e1r6-30e.pdf pdf_icon

BUK7E1R6-30E

BUK7E1R6-30EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep

 7.1. Size:209K  nxp
 buk7e1r8-40e.pdf pdf_icon

BUK7E1R6-30E

BUK7E1R8-40EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Rep

 7.2. Size:207K  nxp
 buk7e1r9-40e.pdf pdf_icon

BUK7E1R6-30E

BUK7E1R9-40EN-channel TrenchMOS standard level FET5 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe

 8.1. Size:205K  nxp
 buk7e13-60e.pdf pdf_icon

BUK7E1R6-30E

BUK7E13-60EN-channel TrenchMOS standard level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a SOT226 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repe

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