BUK7K18-40E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK7K18-40E
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 38 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 24.2 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 12.7 ns
Cossⓘ - Выходная емкость: 134 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.019 Ohm
Тип корпуса: LFPAK56D
Аналог (замена) для BUK7K18-40E
BUK7K18-40E Datasheet (PDF)
buk7k18-40e.pdf
BUK7K18-40EDual N-channel 40 V, 19 m standard level MOSFET10 December 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
buk7k134-100e.pdf
BUK7K134-100EDual N-channel 100 V, 121 m standard level MOSFET2 September 2015 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
buk7k17-80e.pdf
BUK7K17-80EDual N-channel 80 V, 17 m standard level MOSFET10 May 2018 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC
buk7k15-80e.pdf
BUK7K15-80EDual N-channel 80 V, 15 m standard level MOSFET11 May 2018 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package usingTrenchMOS technology. This product has been designed and qualified to AEC-Q101 standard foruse in high performance automotive applications.2. Features and benefits Dual MOSFET AEC
buk7k12-60e.pdf
BUK7K12-60EDual N-channel 60 V, 9.3 m standard level MOSFET11 December 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
buk7k17-60e.pdf
BUK7K17-60EDual N-channel 60 V, 14 m standard level MOSFET10 December 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918