Справочник MOSFET. BUK7K5R6-30E

 

BUK7K5R6-30E Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: BUK7K5R6-30E
   Маркировка: 75E630
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 64 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Qg ⓘ - Общий заряд затвора: 29.7 nC
   tr ⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 380 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0056 Ohm
   Тип корпуса: LFPAK56D
 

 Аналог (замена) для BUK7K5R6-30E

   - подбор ⓘ MOSFET транзистора по параметрам

 

BUK7K5R6-30E Datasheet (PDF)

 ..1. Size:304K  nxp
buk7k5r6-30e.pdfpdf_icon

BUK7K5R6-30E

BUK7K5R6-30EDual N-channel 30 V, 5.6 m standard level MOSFET6 November 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 7.1. Size:296K  nxp
buk7k5r1-30e.pdfpdf_icon

BUK7K5R6-30E

BUK7K5R1-30EDual N-channel 30 V, 5.1 m standard level MOSFET6 November 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 8.1. Size:301K  nxp
buk7k52-60e.pdfpdf_icon

BUK7K5R6-30E

BUK7K52-60EDual N-channel 60 V, 45 m standard level MOSFET10 December 2013 Product data sheet1. General descriptionDual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

 9.1. Size:713K  nxp
buk7k134-100e.pdfpdf_icon

BUK7K5R6-30E

BUK7K134-100EDual N-channel 100 V, 121 m standard level MOSFET2 September 2015 Product data sheet1. General descriptionDual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified to AECQ101 standard for use in high performance automotive applications.2. Features and benefits Dual MOSFET

Другие MOSFET... BUK7E8R3-40E , BUK7K12-60E , BUK7K17-60E , BUK7K18-40E , BUK7K25-40E , BUK7K35-60E , BUK7K52-60E , BUK7K5R1-30E , IRF530 , BUK7K6R2-40E , BUK7K6R8-40E , BUK7K8R7-40E , BUK7Y113-100E , BUK7Y12-100E , BUK7Y12-40E , BUK7Y14-80E , BUK7Y15-100E .

History: IRF1902

 

 
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