BUK7Y29-40E. Аналоги и основные параметры
Наименование производителя: BUK7Y29-40E
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 37 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 26 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 5.5 ns
Cossⓘ - Выходная емкость: 92 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.029 Ohm
Тип корпуса: LFPAK56 POWER-SO8
Аналог (замена) для BUK7Y29-40E
- подборⓘ MOSFET транзистора по параметрам
BUK7Y29-40E даташит
buk7y29-40e.pdf
BUK7Y29-40E N-channel 40 V, 29 m standard level MOSFET in LFPAK56 7 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repeti
buk7y25-40b.pdf
BUK7Y25-40B N-channel TrenchMOS standard level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use
buk7y2r5-40h.pdf
BUK7Y2R5-40H N-channel 40 V, 2.5 m standard level MOSFET in LFPAK56 10 May 2018 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Fea
buk7y22-100e.pdf
BUK7Y22-100E N-channel 100 V, 22 m standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 compliant Repe
Другие MOSFET... BUK7Y15-100E , BUK7Y153-100E , BUK7Y15-60E , BUK7Y19-100E , BUK7Y21-40E , BUK7Y22-100E , BUK7Y25-60E , BUK7Y25-80E , 10N65 , BUK7Y38-100E , BUK7Y3R5-40E , BUK7Y41-80E , BUK7Y43-60E , BUK7Y4R4-40E , BUK7Y4R8-60E , BUK7Y59-60E , BUK7Y65-100E .
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Список транзисторов
Обновления
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10 | AUD069N10A | AUD062N08BG | AUD060N08AG | AUD060N055 | AUD056N08BGL | AUB062N08BG
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