NDB6060L - Даташиты. Аналоги. Основные параметры

April 1996 NDP6060L / NDB6060LN-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features48A, 60V. RDS(ON) = 0.025 @ VGS = 5V. These logic level N-Channel enhancement mode powerfield effect transistors are produced using Fairchild'sLow drive requirements allowing operation directly from logicproprietary, high cell density, DMOS technology. This

NDP6060L / NDB6060LN-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesGeneral Description48A, 60V. RDS(ON) = 0.025 @ VGS = 5V.Low drive requirements allowing operation directly from logicThese logic level N-Channel enhancement mode power drivers. VGS(TH)

isc N-Channel MOSFET Transistor NDB6060LFEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode power field effect 48A, 60V. RDS(ON) = 0.025 @ VGS=10V. transistors are produced using Fairchild's proprietary, highCritical DC electrical parameters specified at elevatedcell density, DMOS technology. This very high densitytemperature.

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

June 1997 NDP6030PL / NDB6030PL P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description FeaturesThese P-Channel logic level enhancement mode power field -30 A, -30 V. RDS(ON) = 0.042 @ VGS= -4.5 VRDS(ON) = 0.025 @ VGS= -10 V.effect transistors are produced using Fairchild's proprietary,high cell density, DMOS technology. This very high density

May 1994 NDP608A / NDP608AE / NDP608B / NDP608BENDB608A / NDB608AE / NDB608B / NDB608BEN-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-channel enhancement mode power field36 and 32A, 80V. RDS(ON) = 0.042and 0.045. effect transistors are produced using Fairchild'sCritical DC electrical parameters specified atproprietary, high cell densi

September 1997 NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features-24 A, -20 V. RDS(ON) = 0.05 @ VGS= -4.5 V. These logic level P-Channel enhancement mode power fieldRDS(ON) = 0.07 @ VGS= -2.7 V. effect transistors are produced using Fairchild's proprietary,RDS(ON) = 0.075 @ VGS= -2.5 V. high cell density,