BUK952R3-40E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK952R3-40E
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 293 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 10 V
Пороговое напряжение включения |Ugs(th)|: 2.1 V
Максимально допустимый постоянный ток стока |Id|: 120 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 87.8 nC
Время нарастания (tr): 96 ns
Выходная емкость (Cd): 1187 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0022 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для BUK952R3-40E
BUK952R3-40E Datasheet (PDF)
buk952r3-40e.pdf
BUK952R3-40EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive
buk952r8-30b buk962r8-30b.pdf
BUK95/962R8-30BTrenchMOS logic level FETRev. 02 14 October 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK952R8-30B in SOT78 (TO-220AB)BUK962R8-30B in SOT404 (D2-PAK).1.2 Features Very low on-state
buk952r8-60e.pdf
BUK952R8-60EN-channel TrenchMOS logic level FET11 September 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive
buk9520-55.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9520-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 52 Alow on-state resist
buk9520-100b.pdf
BUK9520-100BN-channel TrenchMOS logic level FETRev. 01 6 May 2009 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.1.2 Features
buk9524-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9524-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 45 Alow on-state resist
buk9523-75a buk9623-75a.pdf
BUK9523-75A; BUK9623-75ATrenchMOS logic level FETRev. 01 10 October 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9523-75A in SOT78 (TO-220AB)BUK9623-75A in SOT404 (D 2-PAK).2. Features TrenchMOS techno
buk9520-100a buk9620-100a buk9620-100a.pdf
BUK9520-100A;BUK9620-100ATrenchMOS logic level FETRev. 01 7 February 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9520-100A in SOT78 (TO-220AB)BUK9620-100A in SOT404 (D 2-PAK).2. Features TrenchMOS t
buk9529-100b buk9629-100b.pdf
BUK95/9629-100BTrenchMOS logic level FETRev. 01 18 April 2003 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive (HPA) TrenchMOS technology.Product availability:BUK9529-100B in SOT78 (TO-220AB)BUK9629-100B in SOT404 (D2-PAK).1.2 Features Very low on-st
buk9528-55 2.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9528-55 Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope using trench VDS Drain-source voltage 55 Vtechnology. The device features very ID Drain current (DC) 40 Alow on-state resist
buk9528 buk9628-100a.pdf
Philips Semiconductors Product specification TrenchMOS transistor BUK9528-100A Logic level FET BUK9628-100AGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope available in VDS Drain-source voltage 100 VTO220AB and SOT404 . Using ID Drain current (DC) 49 Atrench techn
buk9524-55a buk9624-55a.pdf
BUK9524-55A; BUK9624-55ATrenchMOS logic level FETRev. 01 29 September 2000 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9524-55A in SOT78 (TO-220AB)BUK9624-55A in SOT404 (D 2-PAK).2. Features TrenchMOS tech
buk9528-55a buk9528-55a buk9628-55a.pdf
BUK9528-55A; BUK9628-55ATrenchMOS logic level FETRev. 01 18 January 2001 Product specification1. DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingTrenchMOS technology, featuring very low on-state resistance.Product availability:BUK9528-55A in SOT78 (TO-220AB)BUK9628-55A in SOT404 (D 2-PAK).2. Features TrenchMOS techno
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