BUK962R1-40E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BUK962R1-40E
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 293 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 10 V
Пороговое напряжение включения |Ugs(th)|: 2.1 V
Максимально допустимый постоянный ток стока |Id|: 120 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 87.8 nC
Время нарастания (tr): 96 ns
Выходная емкость (Cd): 1187 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0018 Ohm
Тип корпуса: D2PAK
Аналог (замена) для BUK962R1-40E
BUK962R1-40E Datasheet (PDF)
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buk962r8-60e.pdf
BUK962R8-60EN-channel TrenchMOS logic level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive ava
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