Справочник MOSFET. BUK962R5-60E

 

BUK962R5-60E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BUK962R5-60E
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 357 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 120 nC
   trⓘ - Время нарастания: 119 ns
   Cossⓘ - Выходная емкость: 1051 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0023 Ohm
   Тип корпуса: D2PAK

 Аналог (замена) для BUK962R5-60E

 

 

BUK962R5-60E Datasheet (PDF)

 ..1. Size:239K  nxp
buk962r5-60e.pdf

BUK962R5-60E
BUK962R5-60E

BUK962R5-60EN-channel TrenchMOS logic level FETRev. 2 16 May 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.1.2 Features and benefits AEC Q101 compliant Sui

 7.1. Size:340K  philips
buk952r8-30b buk962r8-30b.pdf

BUK962R5-60E
BUK962R5-60E

BUK95/962R8-30BTrenchMOS logic level FETRev. 02 14 October 2002 Product data1. Product profile1.1 DescriptionN-channel enhancement mode field-effect power transistor in a plastic package usingPhilips High-Performance Automotive TrenchMOS technology.Product availability:BUK952R8-30B in SOT78 (TO-220AB)BUK962R8-30B in SOT404 (D2-PAK).1.2 Features Very low on-state

 7.2. Size:211K  nxp
buk962r1-40e.pdf

BUK962R5-60E
BUK962R5-60E

BUK962R1-40EN-channel TrenchMOS logic level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive ava

 7.3. Size:208K  nxp
buk962r8-60e.pdf

BUK962R5-60E
BUK962R5-60E

BUK962R8-60EN-channel TrenchMOS logic level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive ava

 7.4. Size:210K  nxp
buk962r6-40e.pdf

BUK962R5-60E
BUK962R5-60E

BUK962R6-40EN-channel TrenchMOS logic level FET13 July 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.This product has been designed and qualified to AEC Q101 standard for use in highperformance automotive applications.1.2 Features and benefits AEC Q101 compliant Repetitive ava

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