Справочник MOSFET. BUK966R5-60E

 

BUK966R5-60E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: BUK966R5-60E

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 182 W

Предельно допустимое напряжение сток-исток (Uds): 60 V

Предельно допустимое напряжение затвор-исток (Ugs): 10 V

Пороговое напряжение включения Ugs(th): 2.1 V

Максимально допустимый постоянный ток стока (Id): 75 A

Максимальная температура канала (Tj): 175 °C

Общий заряд затвора (Qg): 48 nC

Время нарастания (tr): 75 ns

Выходная емкость (Cd): 439 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0059 Ohm

Тип корпуса: D2PAK

Аналог (замена) для BUK966R5-60E

 

 

BUK966R5-60E Datasheet (PDF)

1.1. buk966r5-60e.pdf Size:207K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK966R5-60E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava

5.1. buk9637-100e.pdf Size:210K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK9637-100E N-channel TrenchMOS logic level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive a

5.2. buk961r4-30e.pdf Size:234K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK961R4-30E N-channel TrenchMOS logic level FET Rev. 2 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits  AEC Q101 compliant  Sui

 5.3. buk964r7-80e.pdf Size:253K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK964R7-80E N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Sui

5.4. buk964r2-80e.pdf Size:263K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK964R2-80E N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Sui

 5.5. buk961r5-30e.pdf Size:211K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK961R5-30E N-channel TrenchMOS logic level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive a

5.6. buk962r5-60e.pdf Size:239K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK962R5-60E N-channel TrenchMOS logic level FET Rev. 2 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits  AEC Q101 compliant  Sui

5.7. buk969r3-100e.pdf Size:211K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK969R3-100E N-channel TrenchMOS logic level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive

5.8. buk965r8-100e.pdf Size:237K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK965R8-100E N-channel TrenchMOS logic level FET Rev. 2 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits  AEC Q101 compliant  Su

5.9. buk964r1-40e.pdf Size:208K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK964R1-40E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava

5.10. buk964r2-60e.pdf Size:207K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK964R2-60E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava

5.11. buk969r0-60e.pdf Size:207K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK969R0-60E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava

5.12. buk961r7-40e.pdf Size:211K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK961R7-40E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava

5.13. buk9615-100e.pdf Size:251K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK9615-100E N-channel TrenchMOS logic level FET 13 February 2014 Product data sheet 1. General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits • AEC Q101 compliant • Repetitive avalanche rated •

5.14. buk965r4-40e.pdf Size:208K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK965R4-40E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava

5.15. buk963r3-60e.pdf Size:208K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK963R3-60E N-channel TrenchMOS logic level FET 20 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava

5.16. buk963r1-40e.pdf Size:210K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK963R1-40E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava

5.17. buk962r1-40e.pdf Size:211K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK962R1-40E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava

5.18. buk962r8-60e.pdf Size:208K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK962R8-60E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava

5.19. buk964r8-60e.pdf Size:207K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK964R8-60E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava

5.20. buk961r6-40e.pdf Size:236K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK961R6-40E N-channel TrenchMOS logic level FET Rev. 2 — 16 May 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits  AEC Q101 compliant  Sui

5.21. buk9611-80e.pdf Size:212K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK9611-80E N-channel TrenchMOS logic level FET 5 October 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive av

5.22. buk96150-55a.pdf Size:71K _update_mosfet

BUK966R5-60E
BUK966R5-60E

 Philips Semiconductors Product specification TrenchMOS transistor BUK95150-55A Logic level FET BUK96150-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 13 A ’trench’ techno

5.23. buk9620-100a.pdf Size:321K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK9520-100A; BUK9620-100A TrenchMOS™ logic level FET Rev. 01 — 7 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance. Product availability: BUK9520-100A in SOT78 (TO-220AB) BUK9620-100A in SOT404 (D 2-PAK). 2. Features TrenchMOS™ t

5.24. buk968r3-40e.pdf Size:210K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK968R3-40E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava

5.25. buk9614-60e.pdf Size:206K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK9614-60E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive aval

5.26. buk962r6-40e.pdf Size:210K _update_mosfet

BUK966R5-60E
BUK966R5-60E

BUK962R6-40E N-channel TrenchMOS logic level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits • AEC Q101 compliant • Repetitive ava

5.27. buk9575 buk9675-100a.pdf Size:82K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9575-100A Logic level FET BUK9675-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 23 A trench technology whi

5.28. buk9515-100a buk9615-100a.pdf Size:70K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9515-100A Logic level FET BUK9615-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench technology whic

5.29. buk9520-100a buk9620-100a.pdf Size:321K _philips

BUK966R5-60E
BUK966R5-60E

BUK9520-100A; BUK9620-100A TrenchMOS logic level FET Rev. 01 7 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9520-100A in SOT78 (TO-220AB) BUK9620-100A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology

5.30. buk9614-30 1.pdf Size:50K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9614-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using trench technology. ID Drain current (DC) 69 A Thedevice features very

5.31. buk95 buk96 buk9e06-55b.pdf Size:115K _philips

BUK966R5-60E
BUK966R5-60E

BUK95/96/9E06-55B N-channel TrenchMOS logic level FET Rev. 03 30 November 2004 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology, featuring very low on-state resistance. 1.2 Features TrenchMOS technology Q101 compliant 175

5.32. buk9606-30 1.pdf Size:51K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9606-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using trench technology. ID Drain current (DC) 75 A Thedevice features very

5.33. buk9628-55 2.pdf Size:55K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9628-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 40 A the device features ver

5.34. buk9635-55 2.pdf Size:56K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9635-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 34 A the device features ver

5.35. buk9508 buk9608-55a 2.pdf Size:78K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9508-55A Logic level FET BUK9608-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench technology which

5.36. buk9621-30 1.pdf Size:53K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9621-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using trench technology. ID Drain current (DC) 50 A Thedevice features very

5.37. buk9523-75a buk9623-75a.pdf Size:324K _philips

BUK966R5-60E
BUK966R5-60E

BUK9523-75A; BUK9623-75A TrenchMOS logic level FET Rev. 01 10 October 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9523-75A in SOT78 (TO-220AB) BUK9623-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q101

5.38. buk954r4-40b buk964r4-40b buk9e4r4-40b.pdf Size:318K _philips

BUK966R5-60E
BUK966R5-60E

BUK95/96/9E4R4-40B TrenchMOS logic level FET Rev. 02 13 October 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Applications Automo

5.39. buk9509 buk9609 75a-02.pdf Size:326K _philips

BUK966R5-60E
BUK966R5-60E

BUK9509-75A; BUK9609-75A TrenchMOS logic level FET Rev. 02 06 November 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9509-75A in SOT78 (TO-220AB) BUK9609-75A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q10

5.40. buk9510-55a buk9610-55a.pdf Size:327K _philips

BUK966R5-60E
BUK966R5-60E

BUK9510-55A; BUK9610-55A TrenchMOS logic level FET Rev. 01 20 August 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS1 technology, featuring very low on-state resistance. Product availability: BUK9510-55A in SOT78 (TO-220AB) 2 BUK9610-55A in SOT404 (D -PAK). 2. Features TrenchMOS technology Q101 compli

5.41. buk9620-100b.pdf Size:196K _philips

BUK966R5-60E
BUK966R5-60E

BUK9620-100B N-channel TrenchMOS logic level FET Rev. 02 6 May 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and b

5.42. buk9528 buk9628-100a.pdf Size:77K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9528-100A Logic level FET BUK9628-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 49 A trench technology whi

5.43. buk9506-75b buk9606-75b.pdf Size:333K _philips

BUK966R5-60E
BUK966R5-60E

BUK95/9606-75B TrenchMOS logic level FET Rev. 02 30 September 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability: BUK9506-75B in SOT78 (TO-220AB) BUK9606-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistance

5.44. buk9516-55a buk9616-55a.pdf Size:102K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9516-55A Logic level FET BUK9616-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 66 A trench technology which

5.45. buk9506 buk9606-55a 2.pdf Size:66K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9506-55A Logic level FET BUK9606-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 75 A trench technology which

5.46. buk9529-100b buk9629-100b.pdf Size:297K _philips

BUK966R5-60E
BUK966R5-60E

BUK95/9629-100B TrenchMOS logic level FET Rev. 01 18 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability: BUK9529-100B in SOT78 (TO-220AB) BUK9629-100B in SOT404 (D2-PAK). 1.2 Features Very low on-state resis

5.47. buk9511-55a buk9611-55a.pdf Size:341K _philips

BUK966R5-60E
BUK966R5-60E

BUK9511-55A; BUK9611-55A TrenchMOS logic level FET Rev. 01 7 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9511-55A in SOT78 (TO-220AB) BUK9611-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q101

5.48. buk9528-55a buk9628-55a.pdf Size:317K _philips

BUK966R5-60E
BUK966R5-60E

BUK9528-55A; BUK9628-55A TrenchMOS logic level FET Rev. 01 18 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9528-55A in SOT78 (TO-220AB) BUK9628-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q101

5.49. buk9675-55 2.pdf Size:56K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9675-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 19.7 A the device features v

5.50. buk9516-75b buk9616-75b.pdf Size:300K _philips

BUK966R5-60E
BUK966R5-60E

BUK95/9616-75B TrenchMOS logic level FET Rev. 01 23 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability: BUK9516-75B in SOT78 (TO-220AB) BUK9616-75B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistan

5.51. buk9509-55a buk9609-55a.pdf Size:313K _philips

BUK966R5-60E
BUK966R5-60E

BUK95/9609-55A TrenchMOS logic level FET Rev. 01 21 February 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9509-55A in SOT78 (TO-220AB) BUK9609-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C

5.52. buk9510-100b buk9610-100b.pdf Size:342K _philips

BUK966R5-60E
BUK966R5-60E

BUK95/9610-100B TrenchMOS logic level FET Rev. 02 8 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability: BUK9510-100B in SOT78 (TO-220AB) BUK9610-100B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistance

5.53. buk9606-55a 1.pdf Size:56K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9606-55A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 75 A the device features ve

5.54. buk9535-100a buk9635-100a.pdf Size:337K _philips

BUK966R5-60E
BUK966R5-60E

BUK9535-100A; BUK9635-100A TrenchMOS logic level FET Rev. 01 22 January 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9535-100A in SOT78 (TO-220AB) BUK9635-100A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology

5.55. buk9507-30b buk9607-30b.pdf Size:300K _philips

BUK966R5-60E
BUK966R5-60E

BUK95/9607-30B TrenchMOS logic level FET Rev. 01 25 April 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS technology. Product availability: BUK9507-30B in SOT78 (TO-220AB) BUK9607-30B in SOT404 (D2-PAK). 1.2 Features Low on-state resistance Q1

5.56. buk9608-55 2.pdf Size:55K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9608-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting Using trench technology ID Drain current (DC) 75 A the device features very

5.57. buk9540 buk9640-100a 2.pdf Size:81K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9540-100A Logic level FET BUK9640-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 37 A trench technology whi

5.58. buk95150-55a buk96150-55a.pdf Size:71K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK95150-55A Logic level FET BUK96150-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 13 A trench technology whic

5.59. buk9508-55a buk9608-55a.pdf Size:328K _philips

BUK966R5-60E
BUK966R5-60E

BUK95/9608-55A TrenchMOS logic level FET Rev. 03 6 May 2002 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9508-55A in SOT78 (TO-220AB) BUK9608-55A in SOT404 (D2-PAK). 2. Features TrenchMOS technology Q101 compliant 175 C rated

5.60. buk9624-55 1.pdf Size:55K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9624-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 45 A the device features ver

5.61. buk9575-55a buk9675-55a.pdf Size:345K _philips

BUK966R5-60E
BUK966R5-60E

BUK9575-55A; BUK9675-55A TrenchMOS logic level FET Rev. 01 9 February 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9575-55A in SOT78 (TO-220AB) BUK9675-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q101

5.62. buk9605-30a 2.pdf Size:55K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9605-30A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting. Using trench technology ID Drain current (DC) 75 A the device features ve

5.63. buk9514-55a buk9614-55a.pdf Size:322K _philips

BUK966R5-60E
BUK966R5-60E

BUK9514-55A; BUK9614-55A TrenchMOS logic level FET Rev. 01 7 Feb 2001 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9514-55A in SOT78 (TO-220AB) BUK9614-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q101 comp

5.64. buk9518-55a buk9618-55a.pdf Size:333K _philips

BUK966R5-60E
BUK966R5-60E

BUK9518-55A; BUK9618-55A TrenchMOS logic level FET Rev. 01 27 August 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9518-55A in SOT78 (TO-220AB) 2 BUK9618-55A in SOT404 (D -PAK). 2. Features TrenchMOS technology Q101 complia

5.65. buk9524-55a buk9624-55a.pdf Size:333K _philips

BUK966R5-60E
BUK966R5-60E

BUK9524-55A; BUK9624-55A TrenchMOS logic level FET Rev. 01 29 September 2000 Product specification 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9524-55A in SOT78 (TO-220AB) BUK9624-55A in SOT404 (D 2-PAK). 2. Features TrenchMOS technology Q1

5.66. buk9620-55 2.pdf Size:55K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9620-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 52 A the device features ver

5.67. buk95180-100a buk96180-100a.pdf Size:68K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK95180-100A Logic level FET BUK96180-100A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 100 V TO220AB and SOT404 . Using ID Drain current (DC) 11 A trench technology w

5.68. buk953r2-40 buk963r2-40b buk9e3r2-40b.pdf Size:325K _philips

BUK966R5-60E
BUK966R5-60E

BUK95/96/9E3R2-40B TrenchMOS logic level FET Rev. 04 14 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. 1.2 Features Very low on-state resistance Q101 compliant 175 C rated Logic level compatible. 1.3 Applications Automotive

5.69. buk9618-30 1.pdf Size:50K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9618-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using trench technology. ID Drain current (DC) 55 A Thedevice features very

5.70. buk9610-30 1.pdf Size:52K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9610-30 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 30 V mounting using trench technology. ID Drain current (DC) 75 A Thedevice features very

5.71. buk9535-55a buk9635-55a.pdf Size:71K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9535-55A Logic level FET BUK9635-55A GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope available in VDS Drain-source voltage 55 V TO220AB and SOT404 . Using ID Drain current (DC) 34 A trench technology which

5.72. buk9614-55 1.pdf Size:56K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9614-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 68 A the device features ver

5.73. buk9618-55 1.pdf Size:55K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9618-55 Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 55 V mounting. Using trench technology ID Drain current (DC) 57 A the device features ver

5.74. buk9635-100a 1.pdf Size:57K _philips

BUK966R5-60E
BUK966R5-60E

Philips Semiconductors Product specification TrenchMOS? transistor BUK9635-100A Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 100 V mounting. Using trench technology ID Drain current (DC) 40 A the device features

5.75. buk952r8-30b buk962r8-30b.pdf Size:340K _philips

BUK966R5-60E
BUK966R5-60E

BUK95/962R8-30B TrenchMOS logic level FET Rev. 02 14 October 2002 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS technology. Product availability: BUK952R8-30B in SOT78 (TO-220AB) BUK962R8-30B in SOT404 (D2-PAK). 1.2 Features Very low on-state resistanc

5.76. buk9504-40a buk9604-40a buk9e04-40a.pdf Size:358K _philips

BUK966R5-60E
BUK966R5-60E

BUK95/96/9E04-40A TrenchMOS logic level FET Rev. 01 24 October 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS technology, featuring very low on-state resistance. Product availability: BUK9504-40A in SOT78 (TO-220AB); BUK9604-40A in SOT404 (D 2-PAK); BUK9E04-40A in SOT226 (I2-PAK). 2. Features TrenchMOS

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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MOSFET: BUK637-400B | BUK437-500A | CMI80N06 | CMB80N06 | CMP80N06 | MTY30N50E | 2SK3262-01MR | VN88AF | TK290P60Y | SW069R10VS | SUP70040E | SUD25N15-52-E3 | STP30NF10FP | SKS10N20 | SiHA11N80E |
 

 

 

 

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